2PD602AS,115 NXP Semiconductors, 2PD602AS,115 Datasheet - Page 3

• Manufacturer Part Number: 2PD602AS,115
• Description: TRANSISTOR NPN 50V 500MA SC-59
• Manufacturer: NXP Semiconductors

Specifications of 2PD602AS,115

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 30mA, 300mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 170 @ 150mA, 10V
• Power - Max: 250mW
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 2PD602AS T/R; 2PD602AS T/R; 934028540115

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 23
R
I
I
h
V
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
NPN general purpose transistor
th j-a
c
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
p
2PD602AQ
2PD602AR
2PD602AS
2PD602AQ
2PD602AR
2PD602AS
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
f = 100 MHz; note 1
E
E
C
C
C
C
E
C
= 0; V
= 0; V
= i
= 0; V
= 150 mA; V
= 500 mA; V
= 300 mA; I
= 50 mA; V
e
= 0; V
CB
CB
EB
3
CONDITIONS
= 60 V
= 60 V; T
= 4 V
CB
CE
B
CE
CE
= 10 V; f = 1 MHz
note 1
= 30 mA; note 1
= 10 V;
= 10 V; note 1
= 10 V; note 1
CONDITIONS
j
= 150 °C
−
−
−
85
120
170
40
−
−
140
160
180
MIN.
VALUE
500
10
5
10
170
240
340
−
600
15
−
−
−
MAX.
Product data sheet
2PD602A
UNIT
K/W
nA
μA
nA
mV
pF
MHz
MHz
MHz
UNIT