PDTD113ET,215 NXP Semiconductors, PDTD113ET,215 Datasheet
PDTD113ET,215
Specifications of PDTD113ET,215
PDTD113ET T/R
PDTD113ET T/R
Related parts for PDTD113ET,215
PDTD113ET,215 Summary of contents
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PDTD113E series NPN 500 mA resistor-equipped transistors kΩ kΩ Rev. 02 — 16 November 2009 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Type number ...
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... NXP Semiconductors 2. Pinning information Table 3. Pin SOT54 SOT54A SOT54 variant SOT23, SOT346 PDTD113E_SER_2 Product data sheet NPN 500 mA resistor-equipped transistors kΩ kΩ Pinning Description input (base) output (collector) GND (emitter) input (base) output (collector) GND (emitter) input (base) output (collector) GND (emitter) ...
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... NXP Semiconductors 3. Ordering information Table 4. Type number PDTD113EK PDTD113ES PDTD113ET [1] Also available in SOT54A and SOT54 variant packages (see 4. Marking Table 5. Type number PDTD113EK PDTD113ES PDTD113ET [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). ...
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... NXP Semiconductors 6. Thermal characteristics Table 7. Symbol R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 8. ° amb Symbol I CBO I CEO I EBO CEsat V I(off) V I(on) R1 R2/ PDTD113E_SER_2 Product data sheet NPN 500 mA resistor-equipped transistors kΩ kΩ Thermal characteristics ...
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... NXP Semiconductors −1 10 − 100 °C (1) T amb = 25 °C (2) T amb = −40 °C (3) T amb Fig 1. DC current gain as a function of collector current; typical values 10 V I(on) (V) (1) 1 (2) (3) −1 10 − 0 −40 °C (1) T amb = 25 °C (2) T amb = 100 °C (3) T amb Fig 3 ...
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... NXP Semiconductors 8. Package outline 3.1 2.7 3 3.0 1.7 2.5 1.3 1 1.9 Dimensions in mm Fig 5. Package outline SOT346 (SC-59A/TO-236) 4.2 3.6 3 max 4.8 4.4 5.2 14.5 5.0 12.7 Dimensions in mm Fig 7. Package outline SOT54A 2.5 2.1 Fig 9. Package outline SOT23 (TO-236AB) PDTD113E_SER_2 Product data sheet NPN 500 mA resistor-equipped transistors ...
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... NXP Semiconductors 9. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PDTD113EK PDTD113ES PDTD113ET [1] For further information and the availability of packing methods, see PDTD113E_SER_2 Product data sheet NPN 500 mA resistor-equipped transistors kΩ kΩ ...
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... Revision history Document ID Release date PDTD113E_SER_2 20091116 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. PDTD113E_SER_1 20050414 PDTD113E_SER_2 Product data sheet PDTD113E series NPN 500 mA resistor-equipped transistors ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 13. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 Packing information . . . . . . . . . . . . . . . . . . . . . 7 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 Legal information ...