PDTD113ET,215 NXP Semiconductors, PDTD113ET,215 Datasheet - Page 3

• Manufacturer Part Number: PDTD113ET,215
• Description: TRANS NPN W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PDTD113ET,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 33 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 1 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 500 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: 10 V
• Minimum Operating Temperature: - 65 C
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058975215; PDTD113ET T/R; PDTD113ET T/R

NXP Semiconductors
3. Ordering information
4. Marking
5. Limiting values
PDTD113E_SER_2
Product data sheet
Table 4.
[1]
Table 5.
[1]
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Type number
PDTD113EK
PDTD113ES
PDTD113ET
Type number
PDTD113EK
PDTD113ES
PDTD113ET
Symbol
V
V
V
V
I
P
T
T
T
O
stg
j
amb
CBO
CEO
EBO
I
tot
Also available in SOT54A and SOT54 variant packages (see
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Ordering information
Marking codes
Limiting values
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
positive
negative
SOT346
SOT54
SOT23
Package
Name
SC-59A
SC-43A
-
NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
Rev. 02 — 16 November 2009
Description
plastic surface mounted package; 3 leads
plastic single-ended leaded (through hole) package;
3 leads
plastic surface mounted package; 3 leads
Conditions
open emitter
open base
open collector
T
amb
≤ 25 °C
Marking code
E1
D113ES
*7R
PDTD113E series
Section 2
[1]
[1]
-
-
-
-
Min
-
-
-
-
-
-
−65
−65
and
Section
Max
50
50
10
+10
−10
500
250
500
250
+150
150
+150
© NXP B.V. 2009. All rights reserved.
9).
Version
SOT346
SOT54
SOT23
Unit
V
V
V
V
V
mA
mW
mW
mW
°C
°C
°C
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