PBRP113ET,215 NXP Semiconductors, PBRP113ET,215 Datasheet - Page 5

• Manufacturer Part Number: PBRP113ET,215
• Description: TRANS PNP W/RES 40V SOT23
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBRP113ET,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 300mA, 5V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 6mA, 600mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 1 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Peak Dc Collector Current: 600 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058986215; PBRP113ET T/R; PBRP113ET T/R

NXP Semiconductors
PBRP113ET_1
Product data sheet
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
1
1
3
2
1
10
3
2
1
10
FR4 PCB, mounting pad for collector 1 cm
SOT23 (TO-236AB); typical values
Ceramic PCB, Al
SOT23 (TO-236AB); typical values
5
5
0.50
0.20
0.10
0.05
0.02
0.01
0.50
0.20
0.10
0.05
0.02
0.01
= 1
= 1
0
0
0.75
0.33
0.75
0.33
10
10
2
4
4
O
3
standard footprint
10
10
3
3
2
10
10
Rev. 01 — 17 December 2007
2
2
10
10
1
1
PNP 800 mA, 40 V BISS RET; R1 = 1 k , R2 = 1 k
1
1
10
10
PBRP113ET
10
10
2
2
© NXP B.V. 2007. All rights reserved.
t
t
p
p
006aab001
006aab002
(s)
(s)
10
10
3
3
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