BCR 185 E6327 Infineon Technologies, BCR 185 E6327 Datasheet - Page 2

• Manufacturer Part Number: BCR 185 E6327
• Description: TRANSISTOR PNP DGTL AF SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCR 185 E6327

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 10 KOhms
• Typical Resistor Ratio: 0.21
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR185E6327XT; SP000010806

Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR185 T
BCR185F, T
BCR185S, T
BCR185W, T
Junction temperature
Storage temperature
1
2
Thermal Resistance
Parameter
Junction - soldering point
BCR185
BCR185F
BCR185S
BCR185W
Pb-containing package may be available upon special request
For calculation of R
S
S
S
S
102°C
128°C
115°C
thJA
124°C
please refer to Application Note Thermal Resistance
2)
2
Symbol
V
V
V
V
I
P
T
T
Symbol
R
C
j
stg
CEO
CBO
i(fwd)
i(rev)
tot
thJS
-65 ... 150
Value
Value
200
250
250
250
100
150
50
50
40
240
140
105
6
90
BCR185...
2007-08-02
Unit
V
mA
mW
°C
Unit
K/W