BCR 185 E6327 Infineon Technologies, BCR 185 E6327 Datasheet - Page 7

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BCR 185 E6327

Manufacturer Part Number
BCR 185 E6327
Description
TRANSISTOR PNP DGTL AF SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCR 185 E6327

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
0.21
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCR185E6327XT
SP000010806
Permissible Puls Load R
BCR185S
Permissible Puls Load R
BCR185W
K/W
K/W
10
10
10
10
10
10
10
10
10
10
-1
-1
3
2
1
0
3
2
1
0
10
10
-6
-6
10
10
-5
-5
10
10
-4
-4
10
10
-3
-3
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10
10
=
=
-2
-2
(t
(t
p
p
s
s
)
)
t
t
p
p
10
10
0
0
7
Permissible Pulse Load
P
BCR185S
Permissible Pulse Load
P
BCR185W
totmax
totmax
10
10
10
10
10
10
10
10
-
-
3
2
1
0
3
2
1
0
10
10
/P
/P
-6
-6
totDC
totDC
10
10
-5
-5
=
=
10
10
(t
(t
p
p
-4
-4
)
)
10
10
-3
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
10
BCR185...
-2
-2
2007-08-02
s
s
t
t
p
p
10
10
0
0

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