BCR 185 E6327 Infineon Technologies, BCR 185 E6327 Datasheet - Page 5
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BCR 185 E6327
Manufacturer Part Number
BCR 185 E6327
Description
TRANSISTOR PNP DGTL AF SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BCR_185_E6327.pdf
(12 pages)
Specifications of BCR 185 E6327
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
0.21
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCR185E6327XT
SP000010806
SP000010806
Total power dissipation P
BCR185
Total power dissipation P
BCR185S
mW
mW
300
250
225
200
175
150
125
100
300
250
225
200
175
150
125
100
75
50
25
75
50
25
0
0
0
0
15
15
30
30
45
45
60
60
75
75
90 105 120 °C
90 105 120 °C
tot
tot
= (T
= (T
S
S
)
)
T
T
S
S
150
150
5
Total power dissipation P
BCR185F
Total power dissipation P
BCR185W
mW
mW
300
250
225
200
175
150
125
100
300
250
225
200
175
150
125
100
75
50
25
75
50
25
0
0
0
0
15
15
30
30
45
45
60
60
75
75
90 105 120 °C
90 105 120 °C
tot
tot
= (T
= (T
BCR185...
2007-08-02
S
S
)
)
T
T
S
S
150
150