BCR 185 E6327 Infineon Technologies, BCR 185 E6327 Datasheet - Page 4

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BCR 185 E6327

Manufacturer Part Number
BCR 185 E6327
Description
TRANSISTOR PNP DGTL AF SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCR 185 E6327

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
0.21
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCR185E6327XT
SP000010806
DC current gain h
V
Input on Voltage V
V
CE
CE
10
10
10
10
10
10
10
10
= 5 V (common emitter configuration)
= 0.3V (common emitter configuration)
-1
3
2
1
0
2
1
0
10
10
-4
-5
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
-40 °C
-25 °C
25 °C
85 °C
125 °C
-4
10
FE
i (on)
-3
=
10
= (I
(I
-3
C
)
C
10
)
-2
10
-2
A
I
I
C
C
10
10
-1
-1
4
Collector-emitter saturation voltage
V
Input off voltage V
V
CEsat
CE
10
10
10
= 5V (common emitter configuration)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
V
-1
1
0
1
0
10
10
= (I
-3
-5
-40 °C
-25 °C
25 °C
85 °C
125 °C
C
), h
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
FE
-4
= 20
i(off)
10
10
=
-2
-3
(I
C
)
BCR185...
2007-08-02
10
A
-2
I
I
C
C
A
10
10
-1
-1

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