BCR 185 E6327 Infineon Technologies, BCR 185 E6327 Datasheet - Page 4

• Manufacturer Part Number: BCR 185 E6327
• Description: TRANSISTOR PNP DGTL AF SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCR 185 E6327

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 10 KOhms
• Typical Resistor Ratio: 0.21
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR185E6327XT; SP000010806

DC current gain h
V
Input on Voltage V
V
CE
CE
10
10
10
10
10
10
10
10
= 5 V (common emitter configuration)
= 0.3V (common emitter configuration)
-1
3
2
1
0
2
1
0
10
10
-4
-5
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
-40 °C
-25 °C
25 °C
85 °C
125 °C
-4
10
FE
i (on)
-3
=
10
= (I
(I
-3
C
)
C
10
)
-2
10
-2
A
I
I
C
C
10
10
-1
-1
4
Collector-emitter saturation voltage
V
Input off voltage V
V
CEsat
CE
10
10
10
= 5V (common emitter configuration)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
V
-1
1
0
1
0
10
10
= (I
-3
-5
-40 °C
-25 °C
25 °C
85 °C
125 °C
C
), h
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
FE
-4
= 20
i(off)
10
10
=
-2
-3
(I
C
)
BCR185...
2007-08-02
10
A
-2
I
I
C
C
A
10
10
-1
-1