IDT49FCT806CTPY IDT, Integrated Device Technology Inc, IDT49FCT806CTPY Datasheet - Page 4

• Manufacturer Part Number: IDT49FCT806CTPY
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT49FCT806CTPY

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IDT49FCT805BT/CT, 806BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
POWER SUPPLY CHARACTERISTICS
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
3. Per TTL driven input; (V
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
6. I
I
I
D
N
I
f
N
All currents are in milliamps and all frequencies are in megahertz.
C
C
CC
CCD
O
I
H
T
O
CC
= Output Frequency
I
I
= I
= I
CCD
C
= Number of Outputs at f
= Number of TTL Inputs at D
= Duty Cycle for TTL Inputs High
I
= Quiescent Current (I
CC
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
QUIESCENT
CC
= Power Supply Current for a TTL High Input (V
+ I
CC
D
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply Current
Total Power Supply Current
+ I
H
N
INPUTS
T
+ I
CC
IN
CCD
+ I
= 5.0V, +25 C ambient.
CCL,
= 3.4V); all other inputs at V
DYNAMIC
Parameter
O
(f
O
I
N
CCH
H
O
)
and I
CCZ
)
(6)
CC
(4)
formula. These limits are guaranteed but not tested.
IN
CC
= 3.4V)
Eleven Outputs
Toggling
V
V
V
Outputs Open
OE
50% Duty Cycle
V
Outputs Open
fo = 25MHz
50% Duty Cycle
OE
Mon. Output Toggling
V
Outputs Open
fo = 50MHz
50% Duty Cycle
OE
or GND.
CC
IN
CC
CC
CC
A
A
A
= 3.4V
= Max.
= Max.
= Max.
= Max.
=
=
=
OE
OE
OE
B
B
B
(3)
= GND
=V
= GND
9.2
Test Conditions
CC
V
V
V
V
V
V
V
V
V
V
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
MILITARY AND COMMERCIAL TEMPERATURE RANGES
= V
= GND
= V
= GND
= V
= GND
= 3.4V
= GND
= 3.4V
= GND
(1)
CC
CC
CC
Min.
—
—
—
—
—
—
Typ.
33.5
0.5
1.5
1.8
60
33
(2)
55.5
57.5
Max.
100
2.0
3.0
4.0
(5)
(5)
MHz/bit
2920 tbl 06
Unit
mA
mA
A/
4