OQ2538HP NXP Semiconductors, OQ2538HP Datasheet - Page 20

• Manufacturer Part Number: OQ2538HP
• Manufacturer: NXP Semiconductors

Specifications of OQ2538HP

• Operating Temperature (min): -40C
• Operating Temperature (max): 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Philips Semiconductors
Table 1 Bonding pad locations. All x/y coordinates
Table 2 Physical characteristics of bare die
1998 Oct 14
GND
V
V
GND
GND
LOSDC
LOS
GND
REF
CAPA
V
V
GND
GND
OUTQ
GND
OUT
GND
Glass passivation
Bonding pad dimension
Metallization
Thickness
Size
Backing
Attache temperature
Attache time
SYMBOL
EE
EE
EE
EE
SDH/SONET STM16/OC48 main amplifiers
PARAMETER
represent the position of the centre of the pad
with respect to the centre of the die (see
Fig.16).
PAD
10
11
12
13
14
15
16
17
18
1
2
3
4
5
6
7
8
9
0.8 m silicon nitride on top of 0.9 m PSG (PhosphoSilicate Glass)
minimum dimension of exposed metallization is 90
1.8 m AlCu (1% Cu)
380 m nominal
2.070
silicon; electrically connected to V
<440 C; recommended die attache is glue
<15 s
+100
+300
+500
+700
+900
+900
+900
+900
+900
+900
+900
+900
900
900
700
500
300
100
COORDINATES
x
2.070 mm (4.285 mm
+100
+300
+500
700
900
900
900
900
900
900
900
900
900
900
700
500
300
100
y
20
2
)
GND
n.c.
GND
n.c.
GND
GND
AGCDC
COFFQ
COFF
V
V
AGC
GND
GND
INQ
GND
IN
GND
SYMBOL
EE
EE
EE
potential through substrate contacts
VALUE
PAD
OQ2538HP; OQ2538U
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
90 m (pad size = 100
+900
+900
+700
+500
+300
+100
100
300
500
700
900
900
900
900
900
900
900
900
COORDINATES
x
Product specification
100 m)
+700
+900
+900
+900
+900
+900
+900
+900
+900
+900
+900
+700
+500
+300
+100
100
300
500
y