TZA3046UN1 NXP Semiconductors, TZA3046UN1 Datasheet - Page 12

• Manufacturer Part Number: TZA3046UN1
• Manufacturer: NXP Semiconductors

Specifications of TZA3046UN1

• Operating Temperature (min): -40C
• Operating Temperature (max): 85C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Philips Semiconductors
12. Bare die information
13. Package outline
TZA3046_1
Product data sheet
Table 5:
Not applicable.
Parameter
Glass passivation
Bonding pad
dimension
Metallization
Thickness
Die dimension
Backing
Attach temperature
Attach time
Fig 10. Bonding pad locations
Origin is center of die.
Physical characteristics of the bare die
1
2
3
Value
0.3 m PSG (PhosphoSilicate Glass) on top of 0.8 m silicon nitride
minimum dimension of exposed metallization is 90 m
(pad size = 100 m
metallization of 80 m
2.8 m AlCu
380 m nominal
820 m
silicon; electrically connected to GND potential through substrate contacts
< 440 C; recommended die attach is glue
< 15 s
Rev. 01 — 19 May 2006
17
4
Fiber Channel/Gigabit Ethernet transimpedance amplifier
1300 m ( 20 m
16
5
15
6
100 m) except pads 2 and 3 which have exposed
80 m (pad size = 90 m
(0,0)
Y
14
2
7
)
X
13
8
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
12
9
001aac627
11
10
90 m)
TZA3046
90 m
12 of 15