MT28C6428P20FM-80 TET Micron Technology Inc, MT28C6428P20FM-80 TET Datasheet - Page 34
MT28C6428P20FM-80 TET
Manufacturer Part Number
MT28C6428P20FM-80 TET
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT28C6428P20FM-80_TET.pdf
(48 pages)
Specifications of MT28C6428P20FM-80 TET
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Not Compliant
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CAPACITANCE
(T
FLASH READ CYCLE TIMING REQUIREMENTS
4 Meg x 16 Asynchronous/Page Flash 512K x 16 SRAM Combo Memory
MT28C6428P20_4.p65 – Rev. 4, Pub. 10/02
PARAMETER/CONDITION
Input Capacitance
Output Capacitance
PARAMETER
Address to output delay
F_CE# LOW to output delay
Page address access
F_OE# LOW to output delay
F_RP# HIGH to output delay
CE# or OE# HIGH to output High-Z
Output hold from address, CE# or OE# change
READ cycle time
RST# deep power-down
A
= +25ºC; f = 1 MHz)
4 MEG x 16 ASYNCHRONOUS/PAGE FLASH
SYMBOL
t
RWHOP
t
t
t
t
RWH
APA
AOE
t
t
t
ACE
t
AA
OD
OH
RC
34
512K x 16 SRAM COMBO MEMORY
F_V
MIN
CC
0
= 1.80V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-80
MAX
–
SYMBOL
200
100
2.20V
80
80
30
25
20
80
C
OUT
C
F_V
MIN
CC
0
TYP
13
7
= 1.70V
-85
–
MAX
MAX
250
100
1.90V
85
85
35
30
25
85
12
15
©2002, Micron Technology, Inc.
UNITS
UNITS
p F
p F
ns
ns
ns
ns
ns
ns
ns
ns
µs
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