PF38F2030W0YTQ1 Micron Technology Inc, PF38F2030W0YTQ1 Datasheet - Page 22
PF38F2030W0YTQ1
Manufacturer Part Number
PF38F2030W0YTQ1
Description
Manufacturer
Micron Technology Inc
Datasheet
1.PF38F2030W0YTQ1.pdf
(52 pages)
Specifications of PF38F2030W0YTQ1
Operating Supply Voltage (max)
1.95V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Compliant
Intel® Wireless Flash Memory (W18/W30 SCSP)
Table 11.
Figure 5.
Table 12.
June 2005
22
Note:
1.
2.
3.
4.
R-UB#, R-LB#
ADDRESSES
R12
R11
W1
W2
W3
W4
W5
W6
W7
#
#
S-CS1#
R-WE#
S-CS2
R-OE#
DATA
See
Timings of t
referenced to output voltage levels.
At any given temperature and voltage condition, t
to device interconnection.
Sampled but not 100% tested.
Symbol
Symbol
Figure 5, “AC Waveform SRAM Read Operations”
t
t
BHZ
BLZ
t
t
t
t
t
t
t
WC
DW
CW
WP
AW
AS
DH
SRAM AC Characteristics — Read Operations
AC Waveform SRAM Read Operations
SRAM AC Characteristics — Write Operations
HZ
Standby
R-UB#, R-LB# to Output in Low-Z
R-UB#, R-LB# to Output in High-Z
and t
Write Cycle Time
Address Setup to R-WE# (S-CS1#) and R-UB#/R-LB# Low
R-WE# (S-CS1#) Pulse Width
Data to Write Time Overlap
Address Setup to R-WE# (S-CS1#) High
S-CS1# (R-WE#) Setup to R-WE# (S-CS1#) High
Data Hold from R-WE# (S-CS1#) High
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not
Intel® Wireless Flash Memory (W18/W30 SCSP)
Order Number: 251407, Revision: 009
R6
R2
R11
Parameter
Parameter
R3
R7
R5
R4
HZ
(Max) is less than t
Address Stable
.
R1
R1
LZ
Valid Data
(Max) both for a given device and from device
Min
70
55
30
60
60
0
0
Min
0
0
Max
Max
25
–
–
–
–
–
–
–
–
R10
R12
R8
R9
Unit
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
Datasheet
Notes
Notes
1,4
1,4
1,2,3
1,4
1
1
1
1
1