MT48LC2M32B2P-6:G Micron Technology Inc, MT48LC2M32B2P-6:G Datasheet - Page 37

• Manufacturer Part Number: MT48LC2M32B2P-6:G
• Description: IC, SDRAM, 64MBIT, 166MHZ, TSOP-86
• Manufacturer: Micron Technology Inc
• Type: SDRAMr
• Series: -r

Specifications of MT48LC2M32B2P-6:G

• Organization: 2Mx32
• Density: 64Mb
• Address Bus: 13b
• Access Time (max): 17/7.5/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Memory Type: DRAM - Sychronous
• Access Time: 5.5ns
• Page Size: 64Mbit
• Memory Case Style: TSOP
• No. Of Pins: 86
• Operating Temperature Range: 0°C To +70°C
• Frequency: 166MHz
• Supply Voltage: 3.3V
• Format - Memory: RAM
• Memory Size: 64M (2Mx32)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Figure 28:
Figure 29:
PDF: 09005aef811ce1fe/Source: 09005aef811ce1d5
64MSDRAMx32_2.fm - Rev. J 12/08 EN
Internal
States
Internal
States
READ with Auto Precharge Interrupted by a WRITE
WRITE with Auto Precharge Interrupted by a READ
Notes:
COMMAND
COMMAND
ADDRESS
Note:
ADDRESS
BANK m
BANK m
BANK n
BANK n
DQM
CLK
CLK
DQ
1. DQM is HIGH at T2 to prevent D
DQ
1
Active
Page
DQM is LOW.
READ - AP
BANK n,
Page Active
BANK n
COL a
T0
NOP
T0
READ with Burst of 4
WRITE - AP
BANK n,
Page Active
BANK n
Page Active
COL a
T1
D
T1
NOP
CL = 3 (BANK n)
a
IN
WRITE with Burst of 4
a + 1
T2
T2
D
NOP
NOP
IN
37
BANK m,
READ - AP
T3
COL d
T3
BANK m
OUT
D
NOP
OUT
a
Interrupt Burst, Write-Back
t
WR - BANK n
READ with Burst of 4
a + 1 from contending with D
Micron Technology, Inc., reserves the right to change products or specifications without notice.
BANK m,
WRITE - AP
COL d
T4
BANK m
CL = 3 (BANK m)
T4
NOP
D
d
IN
Interrupt Burst, Precharge
WRITE with Burst of 4
T5
T5
d + 1
NOP
NOP
D
Precharge
IN
t
RP - BANK n
t
RP - BANK n
T6
T6
d + 2
D
NOP
NOP
D
OUT
d
IN
©2001 Micron Technology, Inc. All rights reserved.
64Mb: x32 SDRAM
IN
DON’T CARE
DON’T CARE
d at T4.
T7
T7
t WR - BANK m
D
d + 1
d + 3
NOP
NOP
D
t RP - BANK m
OUT
IN
Write-Back
Idle
Commands