MT48LC16M16A2P-75:D Micron Technology Inc, MT48LC16M16A2P-75:D Datasheet - Page 71
![IC, SDRAM, 256MBIT, 133MHZ, TSOP-54](/photos/19/4/190474/4467789_sml.jpg)
MT48LC16M16A2P-75:D
Manufacturer Part Number
MT48LC16M16A2P-75:D
Description
IC, SDRAM, 256MBIT, 133MHZ, TSOP-54
Manufacturer
Micron Technology Inc
Type
SDRAMr
Series
-r
Specifications of MT48LC16M16A2P-75:D
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
135mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Memory Type
DRAM - Sychronous
Memory Configuration
16 X 16
Access Time
5.4ns
Page Size
256Mbit
Memory Case Style
TSOP
No. Of Pins
54
Operating Temperature Range
0°C To +70°C
Format - Memory
RAM
Memory Size
256M (16Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP (0.400", 10.16mm Width)
Lead Free Status / RoHS Status
Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT48LC16M16A2P-75:D
Manufacturer:
SAMTEC
Quantity:
1 200
Company:
Part Number:
MT48LC16M16A2P-75:D
Manufacturer:
MICRON
Quantity:
5 520
Company:
Part Number:
MT48LC16M16A2P-75:D
Manufacturer:
MICRON
Quantity:
6 000
Company:
Part Number:
MT48LC16M16A2P-75:D
Manufacturer:
MICRON42
Quantity:
175
Part Number:
MT48LC16M16A2P-75:D
Manufacturer:
MICRON
Quantity:
20 000
Figure 40: READ With Auto Precharge Interrupted by a WRITE
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Internal
States
Command
Note:
Address
Bank m
Bank n
DQM
CLK
DQ
1
1. DQM is HIGH at T2 to prevent D
active
Page
READ - AP
Bank n,
Bank n
T0
Col a
READ with burst of 4
Page active
NOP
CL = 3 (bank n)
T1
T2
NOP
71
T3
D
NOP
OUT
OUT
a + 1 from contending with D
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE - AP
Bank m,
Col d
T4
Bank m
D
Interrupt burst, precharge
IN
WRITE with burst of 4
T5
NOP
256Mb: x4, x8, x16 SDRAM
D
t
RP - bank n
IN
PRECHARGE Operation
T6
NOP
D
IN
© 1999 Micron Technology, Inc. All rights reserved.
IN
d at T4.
T7
NOP
D
t WR - bank m
Don’t Care
IN
Write-back
Idle