MT41J256M4JP-15E:G Micron Technology Inc, MT41J256M4JP-15E:G Datasheet - Page 30

• Manufacturer Part Number: MT41J256M4JP-15E:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-15E:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Table 12:
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_D2.fm - Rev. F 11/08 EN
I
t
CL I
t
t
t
t
t
t
t
DD
CK (MIN) I
RCD (MIN) I
RC (MIN) I
RAS (MIN) I
RP (MIN)
FAW
RRD I
RFC
DD
Parameter
DD
DD
DD
DD
DD
x4, x8
x16
x4, x8
x16
Timing Parameters
Notes:
5-5-5
-25E
12.5
37.5
12.5
110
50
40
50
10
10
DDR3-800
5
1. I
2. Input slew rate is specified by AC parametric test conditions.
3. I
4. Optional ASR is disabled unless stated otherwise.
2.5
6-6-6
DD
DD
52.5
37.5
110
-25
15
15
40
50
10
10
6
specifications are tested after the device is properly initialized.
parameters are specified with ODT and the output buffer is disabled (MR1[12]).
Electrical Specifications – I
-187E
7-7-7
13.13
50.63
13.13
37.5
37.5
DDR3-1066
110
7.5
50
10
7
1.875
8-8-8
52.50
-187
37.5
37.5
110
7.5
15
15
50
10
8
8-8-8
-15F
110
7.5
48
12
30
45
12
36
8
6
30
DDR3-1333
9-9-9
-15E
13.5
49.5
13.5
110
7.5
36
30
45
9
6
1.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
10-10-10
DD
110
-15
7.5
10
51
15
30
45
15
36
6
1Gb: x4, x8, x16 DDR3 SDRAM
Specifications and Conditions
-125F
9-9-9
11.25
46.25
11.25
110
7.5
35
30
40
9
6
DDR3-1600
10-10-10 11-11-11
©2006 Micron Technology, Inc. All rights reserved.
-125E
12.5
47.5
12.5
110
7.5
1.25
10
35
30
40
6
13.75
48.75
13.75
-125
110
7.5
11
35
30
40
6
Units
CK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns