MT45W8MW16BGX-856 AT Micron Technology Inc, MT45W8MW16BGX-856 AT Datasheet - Page 39

• Manufacturer Part Number: MT45W8MW16BGX-856 AT
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-856 AT

• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Compliant

Table 16:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
Parameter
Address and ADV# LOW setup time
Address HOLD from ADV# going HIGH
Address setup to ADV# going HIGH
Address valid to end of WRITE
LB#/UB# select to end of WRITE
CE# LOW to WAIT valid
CE# HIGH between subsequent async operations
CE# LOW to ADV# HIGH
Chip enable to end of WRITE
Data HOLD from WRITE time
Data WRITE setup time
Chip disable to WAIT High-Z output
Chip enable to Low-Z output
End WRITE to Low-Z output
ADV# pulse width
ADV# setup to end of WRITE
WRITE cycle time
WRITE to DQ High-Z output
WRITE pulse width
WRITE pulse width HIGH
WRITE recovery time
Asynchronous WRITE Cycle Timing Requirements
Notes:
1. Low-Z to High-Z timings are tested with the circuit shown in Figure 27 on page 36. The
2. High-Z to Low-Z timings are tested with the circuit shown in Figure 27 on page 36. The Low-
3. WE# LOW time must be limited to
High-Z timings measure a 100mV transition from either V
Z timings measure a 100mV transition away from the High-Z (V
V
OH
or V
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
OL
.
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AS
AVH
AVS
AW
BW
CEW
CPH
CVS
CW
DH
DW
HZ
LZ
OW
VP
VS
WC
WHZ
WP
WPH
WR
39
t
CEM (4µs).
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
Page/Burst CellularRAM 1.5 Memory
70
70
70
20
10
70
70
45
10
0
2
5
1
5
7
0
5
5
0
70ns
Max
7.5
8
8
OH
Min
85
85
85
20
10
85
85
55
10
0
2
5
1
5
7
0
5
7
0
or V
85ns
CC
©2004 Micron Technology, Inc. All rights reserved.
OL
Q/2) level toward either
Max
toward V
7.5
8
8
Unit
CC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Q/2.
Notes
1
2
2
1
3