MT18HVF25672PDY-80EE1 Micron Technology Inc, MT18HVF25672PDY-80EE1 Datasheet - Page 12
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MT18HVF25672PDY-80EE1
Manufacturer Part Number
MT18HVF25672PDY-80EE1
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT18HVF25672PDY-80EE1.pdf
(18 pages)
Specifications of MT18HVF25672PDY-80EE1
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240VLPRDIMM
Device Core Size
72b
Organization
256Mx72
Total Density
2GByte
Chip Density
1Gb
Access Time (max)
40ps
Maximum Clock Rate
800MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.503A
Number Of Elements
18
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Compliant
Table 9: DDR2 I
Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8)
component data sheet
PDF: 09005aef8286b286
hvf18c128_256x72pdy.pdf - Rev. B 03/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads, I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
Specifications and Conditions – 1GB (Continued)
Notes:
DD
),
t
RRD =
1. Value calculated as one module rank in this operating condition. All other module ranks
2. Value calculated reflects all module ranks in this operating condition.
t
in I
RRD (I
DD
1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 VLP SDRAM RDIMM
DD2P
), AL =
DD
(CKE LOW) mode.
),
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
12
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
1
-80E/
2763
800
2223
-667
© 2007 Micron Technology, Inc. All rights reserved.
I
DD
2088
-53E
Specifications
-40E
2043
Units
mA