MT18HVF25672PDY-80EE1 Micron Technology Inc, MT18HVF25672PDY-80EE1 Datasheet - Page 14

• Manufacturer Part Number: MT18HVF25672PDY-80EE1
• Manufacturer: Micron Technology Inc

Specifications of MT18HVF25672PDY-80EE1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240VLPRDIMM
• Device Core Size: 72b
• Organization: 256Mx72
• Total Density: 2GByte
• Chip Density: 1Gb
• Access Time (max): 40ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.503A
• Number Of Elements: 18
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Compliant

Table 10: DDR2 I
Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
PDF: 09005aef8286b286
hvf18c128_256x72pdy.pdf - Rev. B 03/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads, I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
Notes:
DD
Specifications and Conditions – 2GB (Continued)
),
t
RRD =
1. Value calculated as one module rank in this operating condition. All other module ranks
2. Value calculated reflects all module ranks in this operating condition.
t
in I
RRD (I
DD
1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 VLP SDRAM RDIMM
DD2P
), AL =
DD
(CKE LOW) mode.
),
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
14
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
1
-80E/
3078
800
2583
-667
© 2007 Micron Technology, Inc. All rights reserved.
I
DD
2493
-53E
Specifications
-40E
2403
Units
mA