CBTU4411EE-T NXP Semiconductors, CBTU4411EE-T Datasheet - Page 2

CBTU4411EE-T

Manufacturer Part Number
CBTU4411EE-T
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of CBTU4411EE-T

Operating Temperature (max)
85C
Operating Temperature (min)
0C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Compliant
NXP Semiconductors
2. Features
3. Ordering information
CBTU4411_3
Product data sheet
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Table 1.
T
Type number
CBTU4411EE
amb
Enable (EN) and select signals (S0, S1) are SSTL_18 compatible
Optimized for use in Double Data Rate 2 (DDR2) SDRAM applications
Suitable to be used with 400 Mbit/s to 800 Mbit/s, 200 MHz to 400 MHz DDR2 data
bus
Switch ON-resistance is designed to eliminate the need for series resistor to DDR2
SDRAM
12
Controlled enable/disable times support fast bus turnaround
Pseudo-differential select inputs support accurate and low-skew control of switching
times
Selectable built-in termination resistors on the Sn inputs
Internal 400
VBIAS input for optimal DIMM-port pull-down when disabled
Configurable to support differential strobe with pull-up to
when idle
Low differential skew
Matched rise/fall slew rate
Low crosstalk data-data/data-DQM
Simplified 1 : 4 switch position control by 2-bit encoded input
Single input pin puts all bus switches in OFF (high-impedance) position
Latch-up protection exceeds 500 mA per JESD78
ESD protection exceeds 1500 V HBM per JESD22-A114, 200 V MM per
JESD22-A115, and 750 V CDM per JESD22-C101
= 0 C to +85 C.
ON-resistance
Ordering information
Package
Name
LFBGA72
pull-down resistors on xDPn port
Rev. 03 — 12 October 2009
11-bit DDR2 SDRAM MUX/bus switch with 12
Description
plastic low profile fine-pitch ball grid array package;
72 balls; body 7
7
1.05 mm
3
4
of V
CBTU4411
DD
on channel 10
© NXP B.V. 2009. All rights reserved.
ON resistance
Version
SOT856-1
2 of 20

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