FS10R06XL4 Infineon Technologies, FS10R06XL4 Datasheet - Page 3

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FS10R06XL4

Manufacturer Part Number
FS10R06XL4
Description
IGBT Modules N-CH 600V 17A
Manufacturer
Infineon Technologies
Datasheet

Specifications of FS10R06XL4

Configuration
Hex
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
600 V
Continuous Collector Current At 25 C
17 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EASY1
Ic (max)
10.0 A
Vce(sat) (typ)
1.95 V
Technology
IGBT2 Low Loss
Housing
EasyPACK 1
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FS10R06XL4
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
FS10R06XL4
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FS10R06XL4
Quantity:
67
IGBT-Module
IGBT-Modules
NTC-Widerstand / NTC-thermistor
Nennwiderstand
rated resistance
Abweichung von R
deviation of R
Verlustleistung
power dissipation
B-Wert
B-value
Innerer Wärmewiderstand; DC
thermal resistance, junction to case; DC
Wärmewiderstand; DC
thermal resistance, junction to heat sink; DC
Übergangs-Wärmewiderstand; DC
thermal resistance, case to heat sink; DC
Höchstzulässige Sperrschichttemp.
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Innere Isolation
internal insulation
CTI
comperative tracking index
Anpresskraft pro Feder
mounting force per clamp
Gewicht
weight
Kriechstrecke
creepage distance
Luftstrecke
clearance distance
Charakteristische Werte / characteristic values
Thermische Eigenschaften / thermal properties
Mechanische Eigenschaften / mechanical properties
Technische Information / technical information
100
100
T
T
T
R
Transistor Wechselr. / transistor inverter
Diode Wechselrichter / diode inverter
Transistor Wechselr. / transistor inverter
Diode Wechselrichter / diode inverter
Transistor Wechselr. / transistor inverter
Diode Wechselrichter / diode inverter
Anschluss - Kühlkörper
terminal to heat sink
Anschluss - Anschluss
terminal to terminal
Anschluss - Kühlkörper
terminal to heat sink
Anschluss - Anschluss
terminal to terminal
c
c
c
2
Paste
Paste
= 25°C
= 100°C, R
= 25°C
= R
1
= 1 W/m*K /
= 1 W/m*K /
exp[B(1/T
100
FS10R06XL4
= 493
3 (8)
2
- 1/T
grease
grease
1
)]
= 1 W/m*K
= 1 W/m*K
B
T
R
R
R
T
R
P
T
R/R
vjmax
25/50
thCH
G
thJC
thJH
F
stg
25
25
op
min.
-40
-40
-5
-
-
-
-
-
-
-
-
-
-
vorläufige Daten
preliminary data
20..50
Al
3375
2,20
4,50
0,70
1,00
10,5
typ.
225
25
5
-
2
5
9
5
-
-
-
-
-
-
O
3
max.
1,65
3,80
150
125
125
20
-
5
-
-
-
-
-
K/W
K/W
K/W
K/W
K/W
K/W
mW
mm
mm
mm
mm
k
°C
°C
°C
%
K
N
g

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