F4-50R06W1E3 Infineon Technologies, F4-50R06W1E3 Datasheet
F4-50R06W1E3
Manufacturer Part Number
F4-50R06W1E3
Description
IGBT Modules N-CH 600V 75A
Manufacturer
Infineon Technologies
Datasheet
1.F4-50R06W1E3.pdf
(9 pages)
Specifications of F4-50R06W1E3
Configuration
Quad
Channel Type
N
Collector-emitter Voltage
600V
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Pin Count
18
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
600 V
Continuous Collector Current At 25 C
75 A
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EASY1B
Ic (max)
50.0 A
Vce(sat) (typ)
1.45 V
Technology
IGBT3
Housing
EasyPACK 1B
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
F4-50R06W1E3
Manufacturer:
SAMSUNG
Quantity:
43 000
Part Number:
F4-50R06W1E3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
F4-50R06W1E3
Quantity:
55
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F4-50R06W1E3 Summary of contents
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