DF300R12KE3 Infineon Technologies, DF300R12KE3 Datasheet - Page 7

• Manufacturer Part Number: DF300R12KE3
• Description: IGBT Transistors 1200V 300A DUAL
• Manufacturer: Infineon Technologies

Specifications of DF300R12KE3

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 300 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1470 W
• Maximum Operating Temperature: + 125 C
• Package / Case: IS5a ( 62 mm )-5
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 300.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Transienter Wärmewiderstand
Transient thermal impedance
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
Technische Information / technical information
r
i
r
[K/kW] :
i
i
[K/kW] :
0,001
700
600
500
400
300
200
100
[s] :
i
r
0,01
i
[s] :
0,1
0
[K/kW] :
i
1
0,001
0
Chopper Diode
[s] :
Inversdiode
Chopper Diode
i
Inversdiode
DF300R12KE3
IGBT
IGBT
200
IC,Chip
IC,Modul
0,01
6,499E-02
6,499E-02
6,499E-02
400
35,73
62,99
52,51
1
7 (8)
600
2,601E-02
2,601E-02
2,601E-02
V
42,82
75,66
63,02
CE
t [s]
0,1
2
[V]
800
V
Z
GE
thJC
2,364E-03
2,364E-03
2,364E-03
=±15V, T
4,84
8,52
7,10
3
= f (t)
1000
Zth : IGBT
Zth : Inversdiode
Zth : Diode Chopper
1
vj
=125°C, R
1,187E-05
1,187E-05
1,187E-05
1200
1,61
2,83
2,37
DB_DF300R12KE3_3.0
4
G
=2,4
1400
2002-10-02
10