PN4392 T/R NXP Semiconductors, PN4392 T/R Datasheet - Page 2
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PN4392 T/R
Manufacturer Part Number
PN4392 T/R
Description
Manufacturer
NXP Semiconductors
Datasheet
1.PN4392_TR.pdf
(6 pages)
Specifications of PN4392 T/R
Channel Type
N
Configuration
Single
Gate-source Voltage (max)
-40V
Drain-gate Voltage (max)
-40V
Drain-source Volt (max)
40V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Lead Free Status / RoHS Status
Supplier Unconfirmed
Philips Semiconductors
DESCRIPTION
Symmetrical silicon n-channel
junction FETs in plastic TO-92
envelopes. They are intended for
applications such as analog switches,
choppers, commutators etc.
PINNING
Note: Drain and source are
interchangeable.
QUICK REFERENCE DATA
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
April 1989
1 = gate
2 = source
3 = drain
Drain-source voltage
Total power dissipation
Drain current
Gate-source cut-off voltage
Drain-source on-resistance
Drain-source voltage
Gate-source voltage
Gate-drain voltage
Forward gate current (DC)
Total power dissipation
Storage temperature range
Junction temperature
N-channel silicon field-effect transistors
up to T
V
I
up to T
V
D
DS
DS
= 1 mA; V
= 20 V; V
= 20 V; I
amb
amb
= 25 C
= 25 C
GS
D
GS
= 1 nA
= 0
= 0
handbook, halfpage
P
I
R
DSS
V
tot
DS on
V
GS off
DS
Fig.1 Simplified outline and symbol, TO-92.
2
1
2
3
max.
max.
min.
min.
max.
max.
I
P
T
T
G
V
V
stg
j
tot
V
GSO
GDO
DS
PN4391
max.
max.
max.
max.
max.
max.
50
10
30
MAM042
4
PN4392
g
PN4391 to 4393
360
65 to 150
40
25
60
Product specification
2
5
PN4393
360
150
d
s
40
40
40
50
100
0.5 V
5 mA
3 V
V
mW
mW
V
V
V
mA
C
C