MT46H64M16LFCK-75:A TR Micron Technology Inc, MT46H64M16LFCK-75:A TR Datasheet - Page 61
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MT46H64M16LFCK-75:A TR
Manufacturer Part Number
MT46H64M16LFCK-75:A TR
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H64M16LFCK-75A_TR.pdf
(96 pages)
Specifications of MT46H64M16LFCK-75:A TR
Organization
64Mx16
Density
1Gb
Address Bus
14b
Access Time (max)
6.5/6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
105mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
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Figure 25: Random Read Accesses
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 2, 4, 8, or 16 (if 4, 8, or 16, the following burst interrupts the previous).
3. READs are to an active row in any bank.
4. Shown with nominal
OUT
CL = 2
n (or x, b, g) = data-out from column n (or column x, column b, column g).
READ
Bank,
READ
Bank,
Col x
Col x
T1
T1
CL = 3
T1n
T1n
D
t
n
OUT
AC,
READ
Bank,
READ
Bank,
Col b
Col b
T2
T2
1
61
t
DQSCK, and
D
n + 1
T2n
T2n
OUT
D
1Gb: x16, x32 Mobile LPDDR SDRAM
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
n
READ
READ
Bank,
Bank,
Col g
Col g
T3
T3
OUT
x
t
DQSQ.
D
n + 1
Don’t Care
T3n
T3n
D
x + 1
OUT
OUT
D
OUT
D
T4
T4
NOP
NOP
x
OUT
b
D
x + 1
T4n
T4n
OUT
D
b + 1
OUT
© 2007 Micron Technology, Inc. All rights reserved.
Transitioning Data
READ Operation
D
T5
T5
NOP
NOP
D
OUT
b
OUT
g
T5n
T5n
D
b + 1
D
g + 1
OUT
OUT
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