MT46H64M16LFCK-75:A TR Micron Technology Inc, MT46H64M16LFCK-75:A TR Datasheet - Page 64
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MT46H64M16LFCK-75:A TR
Manufacturer Part Number
MT46H64M16LFCK-75:A TR
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H64M16LFCK-75A_TR.pdf
(96 pages)
Specifications of MT46H64M16LFCK-75:A TR
Organization
64Mx16
Density
1Gb
Address Bus
14b
Access Time (max)
6.5/6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
105mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
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Figure 28: READ-to-PRECHARGE
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Command
Command
Address
Address
DQS
DQ
DQS
DQ
CK#
CK#
CK
CK
4
4
Notes:
Banka,
Col n
Banka,
Col n
READ
READ
T0
T0
1. BL = 4, or an interrupted burst of 8 or 16.
2. PRE = PRECHARGE command.
3. ACT = ACTIVE command.
4. D
5. Shown with nominal
6. READ-to-PRECHARGE equals 2 clocks, which enables 2 data pairs of data-out.
7. A READ command with auto precharge enabled, provided
1
1
cause a precharge to be performed at x number of clock cycles after the READ com-
mand, where x = BL/2.
OUT
n = data-out from column n.
CL = 2
NOP
NOP
T1
T1
CL = 3
T1n
T1n
(a or all)
(a or all)
D
t
Bank a,
Bank a,
AC,
OUT
n
T2
T2
PRE
PRE
t
2
64
2
DQSCK, and
D
n + 1
T2n
T2n
OUT
D
1Gb: x16, x32 Mobile LPDDR SDRAM
OUT
n
D
Micron Technology, Inc. reserves the right to change products or specifications without notice.
n + 2
T3
NOP
T3
NOP
OUT
t
DQSQ.
D
n + 1
Don’t Care
OUT
T3n
t
t
T3n
D
n + 3
RP
RP
OUT
D
n + 2
OUT
T4
T4
NOP
NOP
D
n + 3
OUT
t
RAS (MIN) is met, would
Transitioning Data
© 2007 Micron Technology, Inc. All rights reserved.
READ Operation
Bank a,
Bank a,
T5
T5
ACT
Row
ACT
Row
3
3
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