MT47H64M16HW-5EL:E Micron Technology Inc, MT47H64M16HW-5EL:E Datasheet - Page 66

• Manufacturer Part Number: MT47H64M16HW-5EL:E
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M16HW-5EL:E

• Lead Free Status / RoHS Status: Not Compliant

Figure 26: Nominal Slew Rate for
Figure 27: Tangent Line for
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
Note:
Note:
Vih(dc) MIN
Vil(dc) MAX
Vil(ac) MAX
Vih(dc) MIN
Vil(dc) MAX
Vil(ac) MAX
Vih(ac) MIN
Vih(ac) MIN
Setup slew rate
falling signal
Vref(dc)
1. DQS, DQS# signals must be monotonic between Vil(DC) MAX and Vih(DC) MIN.
1. DQS, DQS# signals must be monotonic between Vil(DC) MAX and Vih(DC) MIN.
Vref(dc)
DQS# 1
VddQ
DQS# 1
DQS 1
VddQ
DQS 1
Vss
t
Vss
DS
Setup slew rate
falling signal
=
Vref to AC
Tangent line (Vref[dc] - Vil[ac] MAX)
region
Vref to AC
region
t
ΔTF
DS
ΔTF
Tangent line
ΔTF
=
Nominal line
t
DS
Vref(dc) - Vil(ac) MAX
Nominal
slew rate
t DS
t
DH
ΔTF
t DH
Nominal
Setup slew rate
rising signal
line
66
ΔTR
Setup slew rate
rising signal
=
ΔTR
Tangent line (Vih[ac] MIN - Vref[dc])
Tangent line
t
DS
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Nominal
slew rate
t
Vref to AC
t DS
DH
region
ΔTR
=
Vih(ac) MIN - Vref(dc)
1Gb: x4, x8, x16 DDR2 SDRAM
Vref to AC
t DH
region
ΔTR
Input Slew Rate Derating
© 2004 Micron Technology, Inc. All rights reserved.