MT48LC16M4A2P-75 IT:G Micron Technology Inc, MT48LC16M4A2P-75 IT:G Datasheet - Page 30

• Manufacturer Part Number: MT48LC16M4A2P-75 IT:G
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC16M4A2P-75 IT:G

• Organization: 16Mx4
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 140mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 18:
Figure 19:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. N 12/08 EN
WRITE Command
WRITE Burst
Note:
An example is shown in Figure 20 on page 31. Data n + 1 is either the last of a burst of two
or the last desired of a longer burst. The 64Mb SDRAM uses a pipelined architecture and
therefore does not require the 2n rule associated with a prefetch architecture. A WRITE
command can be initiated on any clock cycle following a previous WRITE command.
Full-speed random write accesses within a page can be performed to the same bank, as
shown in Figure 21 on page 32, or each subsequent WRITE may be performed to a
different bank.
A8, A9, A11: x16
COMMAND
ADDRESS
A9, A11: x8
A0–A9: x4
A0–A8: x8
A0–A7: x16
NOTE: BL = 2. DQM is LOW.
BA0, BA1
CLK
A11: x4
DQ
RAS#
CAS#
WE#
CKE
A10
CLK
CS#
WRITE
BANK,
COL n
TRANSITIONING DATA
T0
D
n
IN
HIGH
VALID ADDRESS
NOP
n + 1
T1
D
IN
DISABLE AUTO PRECHARGE
ENABLE AUTO PRECHARGE
NOP
T2
ADDRESS
COLUMN
ADDRESS
30
BANK
DON’T CARE
T3
NOP
DON’T CARE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64Mb: x4, x8, x16 SDRAM
©2000 Micron Technology, Inc. All rights reserved.
Commands