CMF10120D Cree Inc, CMF10120D Datasheet - Page 3

• Manufacturer Part Number: CMF10120D
• Description: SIC MOSFET N-CH 1200V 24A TO247
• Manufacturer: Cree Inc
• Series: Z-FET™r

Specifications of CMF10120D

• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 10A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 500µA
• Gate Charge (qg) @ Vgs: 47.1nC @ 20V
• Input Capacitance (ciss) @ Vds: 928pF @ 800V
• Power - Max: 152W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 1.2kV
• On Resistance Rds(on): 0.16ohm
• Rds(on) Test Voltage Vgs: 20V
• Rohs Compliant: YES
• Configuration: Single
• Resistance Drain-source Rds (on): 160 mOhms
• Forward Transconductance Gfs (max / Min): 3.7 S, 3.4 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 24 A
• Power Dissipation: 152 W
• Mounting Style: Through Hole
• Gate Charge Qg: 47.1 nC
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Gate Charge Characteristics
Q
Q
Q
Symbol
gs
gd
g
Fig 1. Typical Output Characteristics T
30
25
20
15
10
60
50
40
30
20
10
5
0
0
0
0
Fig 3. Typical Transfer Characteristics
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
5
Parameter
V
10
DS
10
(V)
15
20
20
Min
J
= 25°C
10V
12V
14V
16V
18V
20V
11.8
21.5
47.1
Value
Typ
125C
25C
Max
Fig 2. Typical Output Characteristics T
Subject to change without Notice
Unit
nC
60
50
40
30
20
10
0
Fig 4. Normalized On-Resistance vs.
1.15
1.05
0.95
0.85
1.1
0.9
0
1
V
I
Per JEDEC24 pg 27
D
DD
0
= 10A,
= 800V, V
CMF10120D Pre. A
25
Temperature
Test Conditions
V
Temperature ( C)
DS
10
50
GS
(V)
= -2/20V
75
100 125 150
20
J
= 125°C
3
10V
12V
14V
16V
18V
20V
Notes