CMF10120D Cree Inc, CMF10120D Datasheet - Page 5

• Manufacturer Part Number: CMF10120D
• Description: SIC MOSFET N-CH 1200V 24A TO247
• Manufacturer: Cree Inc
• Series: Z-FET™r

Specifications of CMF10120D

• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 10A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 500µA
• Gate Charge (qg) @ Vgs: 47.1nC @ 20V
• Input Capacitance (ciss) @ Vds: 928pF @ 800V
• Power - Max: 152W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 1.2kV
• On Resistance Rds(on): 0.16ohm
• Rds(on) Test Voltage Vgs: 20V
• Rohs Compliant: YES
• Configuration: Single
• Resistance Drain-source Rds (on): 160 mOhms
• Forward Transconductance Gfs (max / Min): 3.7 S, 3.4 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 24 A
• Power Dissipation: 152 W
• Mounting Style: Through Hole
• Gate Charge Qg: 47.1 nC
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Fig 9. Typical Gate Charge Characteristics @ 25°C
20
15
10
-5
Fig 7. Inductive Switching Energy vs. Temp
5
0
300
250
200
150
100
50
0
0
25
10
50
Gate Charge (nC)
20
Temp ( C)
75
30
100
EON
EOFF
40
125
50
Subject to change without Notice
Fig 8. Inductive Switching Energy vs. Drain
400
350
300
250
200
150
100
50
0
Fig 10. Typical Avalanche Voltage
0
CMF10120D Pre. A
Drain Current (A)
Current
5
TBD
EON
EOFF
10
5
15