CMF10120D Cree Inc, CMF10120D Datasheet - Page 4

• Manufacturer Part Number: CMF10120D
• Description: SIC MOSFET N-CH 1200V 24A TO247
• Manufacturer: Cree Inc
• Series: Z-FET™r

Specifications of CMF10120D

• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 10A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 500µA
• Gate Charge (qg) @ Vgs: 47.1nC @ 20V
• Input Capacitance (ciss) @ Vds: 928pF @ 800V
• Power - Max: 152W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 1.2kV
• On Resistance Rds(on): 0.16ohm
• Rds(on) Test Voltage Vgs: 20V
• Rohs Compliant: YES
• Configuration: Single
• Resistance Drain-source Rds (on): 160 mOhms
• Forward Transconductance Gfs (max / Min): 3.7 S, 3.4 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 24 A
• Power Dissipation: 152 W
• Mounting Style: Through Hole
• Gate Charge Qg: 47.1 nC
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

10000
Fig 5a. Typical Capacitance vs. VDS (0 - 200V)
1000
0.7
0.6
0.5
0.4
0.3
0.2
0.1
100
10
0
1
1E-6
0
50
10E-6
Fig 6. Transient Thermal Impedance Junction to Case
V
DS
100
C
(V)
C
C
rss
100E-6
oss
iss
150
f = 1 MHz
V
GS
= 0 V
1E-3
Time (sec)
200
Fig 5b. Typical Capacitance vs. VDS (0 - 800V)
10E-3
10000
Subject to change without Notice
1000
100
10
1
0
100E-3
200
CMF10120D Pre. A
V
C
DS
400
iss
C
C
(V)
oss
rss
1
f = 1 MHz
600
V
GS
= 0 V
4
10
800