STL24NM60N STMicroelectronics, STL24NM60N Datasheet - Page 5

• Manufacturer Part Number: STL24NM60N
• Description: MOSFET N-CH 600V 16A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STL24NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 215 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 50V
• Power - Max: 125W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11206-2

STL24NM60N
Table 7.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 18363 Rev 1
I
I
V
I
V
(see
SD
SD
SD
DD
DD
= 16 A, V
= 16 A, di/dt = 100 A/µs
= 16 A, di/dt = 100 A/µs
= 100 V (see
= 100 V, T
Figure
Test conditions
4)
GS
j
= 150 °C
= 0
Figure
4)
Electrical characteristics
Min.
-
-
-
-
Typ.
340
4.6
4.4
5.7
27
28
Max. Unit
1.5
16
64
µC
µC
ns
ns
5/11
A
A
V
A
A