STL24NM60N STMicroelectronics, STL24NM60N Datasheet - Page 6

• Manufacturer Part Number: STL24NM60N
• Description: MOSFET N-CH 600V 16A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STL24NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 215 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 50V
• Power - Max: 125W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11206-2

Test circuits
3
6/11
Figure 2.
Figure 4.
Figure 6.
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Test circuits
Switching times test circuit for
resistive load
Test circuit for inductive load
switching and diode recovery times
Unclamped inductive waveform
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
1000
Doc ID 18363 Rev 1
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 3.
Figure 5.
Figure 7.
V
P
Vgs
Vds
Id
i
V
W
i
=20V=V
10%Vds
90%Vds
90%Vgs
P
w
on
on
2200
µF
1kΩ
GMAX
Vgs(I(t))
Gate charge test circuit
Unclamped inductive load test
circuit
Switching time waveform
I
V
D
))
D
I
G
2.7kΩ
12V
=CONST
Tdelay-off
47kΩ
-off
L
Trise
Trise
D.U.T.
Tcross -over
47kΩ
100Ω
Tfall
Tfall
-
2200
µF
100nF
Concept waveform for Inductive Load Turn-off
STL24NM60N
3.3
µF
D.U.T.
AM01469v1
AM01471v1
AM05540v1
10%Id
1kΩ
90%Id
V
V
V
G
DD
DD