STP24NM60N STMicroelectronics, STP24NM60N Datasheet - Page 3

• Manufacturer Part Number: STP24NM60N
• Description: MOSFET N-CH 600V 17A TO220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP24NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 50V
• Power - Max: 125W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11229-5

STF24NM60N, STP24NM60N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. I
Table 3.
Table 4.
Symbol
Symbol
Symbol
R
R
dv/dt
I
E
DM
P
V
SD
thj-case
I
thj-amb
V
T
AR
T
T
AS
I
I
TOT
ISO
GS
stg
D
D
J
J
(2)
(3)
≤ 17 A, di/dt ≤ 400 A/µs, peak V
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Thermal resistance junction-case max.
Thermal resistance junction-ambient max.
Maximum lead temperature for soldering purpose
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t=1 s;T
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal data
Avalanche characteristics
C
J
=25 °C)
= 25 °C, I
Parameter
D
Parameter
Doc ID 18047 Rev 1
Parameter
C
= I
= 25 °C
AR
DS
, V
≤ V
DD
(BR)DSS
C
C
J
= 25 °C
= 100 °C
= 50 V)
max)
, V
DD
= 80% V
(BR)DSS
TO-220
TO-220
125
17
11
68
1
Value
300
-55 to 150
6
Value
Value
± 30
0.63
300
15
TO-220FP
TO-220FP
Electrical ratings
17
11
68
2500
30
4
(1)
(1)
(1)
°C/W
°C/W
Unit
V/ns
Unit
°C
Unit
°C
W
V
A
A
A
V
mJ
A
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