STP24NM60N STMicroelectronics, STP24NM60N Datasheet - Page 7

• Manufacturer Part Number: STP24NM60N
• Description: MOSFET N-CH 600V 17A TO220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP24NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 50V
• Power - Max: 125W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11229-5

STF24NM60N, STP24NM60N
Figure 8.
Figure 10. Capacitance variations
Figure 12. Normalized gate threshold voltage
(norm)
V
6100
2100
5100
4100
3100
1100
GS(th)
1.00
0.80
1.10
0.70
0.90
V
(V)
(pF)
100
12
10
GS
C
2
8
6
4
0
-50
0
0
V
DS
Gate charge vs gate-source voltage Figure 9.
vs temperature
-25
10
0
20
20
V
25
DD
I
D
=480V
= 17A
30
50
40
75
40
Crss
I
D =
100
60
250 µA
Coss
50
Ciss
V
T
GS
Q
V
J
(°C)
DS
Doc ID 18047 Rev 1
g
(nC)
AM07979v1
AM08535v1
AM08537v1
(V)
500
400
300
100
0
200
Figure 11. Output capacitance stored energy
Figure 13. Normalized on resistance vs
R
(norm)
R
0.172
0.170
0.168
0.158
0.176
0.174
0.166
0.164
0.162
0.160
DS(on)
DS(on)
E
(µJ)
(Ω)
1.0
0.5
1.5
oss
2.0
4.0
3.0
1.0
8.0
6.0
5.0
2.0
7.0
9.0
0
-50
0
0
Static drain-source on resistance
temperature
-25
100
V
GS
5
=10V
0
200
25
I
Electrical characteristics
300 400
D
= 8 A
10
50
75
500
100
15
500
T
I
J
D
(°C)
(A)
AM08538v1
AM08536v1
AM08534v1
V
DS
7/15
(V)