STY112N65M5 STMicroelectronics, STY112N65M5 Datasheet - Page 4

• Manufacturer Part Number: STY112N65M5
• Description: MOSFET N-CH 650V 93A MAX247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STY112N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 47A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 93A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 360nC @ 10V
• Input Capacitance (ciss) @ Vds: -
• Power - Max: 450W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohms
• Drain-source Breakdown Voltage: 710 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 96 A
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 350 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11236-5

Electrical characteristics
2
4/12
Electrical characteristics
(T
Table 4.
Table 5.
1. C
2. C
V
Symbol
Symbol
C
C
R
C
V
(BR)DSS
to 80% V
to 80% V
C
o(er)
I
I
C
DS(on)
C
o(tr)
Q
GS(th)
Q
= 25 °C unless otherwise specified)
GSS
R
DSS
Q
o(tr)
o(er)
oss
iss
rss
gs
gd
G
g
(1)
(2)
is a constant capacitance value that gives the same charging time as C
is a constant capacitance value that gives the same stored energy as C
DSS
DSS
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
.
.
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 15321 Rev 2
V
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
GS
GS
GS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= Max rating
= Max rating, T
= 100 V, f = 1 MHz,
= 0
= 0, V
= 0, V
= 10 V
= ± 25 V
= V
= 10 V, I
= 520 V, I
Figure
Test conditions
Test conditions
GS
DS
DS
, I
15)
GS
D
D
= 0 to 520 V
= 0 to 520 V
D
= 250 µA
= 48 A
= 0
= 48 A,
C
=125 °C
Min.
Min.
oss
650
oss
3
while V
while V
16870
0.019
1333
Typ.
Typ.
1.26
365
350
350
118
97
DS
DS
4
7
is rising from 0
is rising from 0
STY112N65M5
0.022
Max.
Max.
100
100
1
5
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
pF
V
V
Ω
Ω