STY112N65M5 STMicroelectronics, STY112N65M5 Datasheet - Page 9

• Manufacturer Part Number: STY112N65M5
• Description: MOSFET N-CH 650V 93A MAX247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STY112N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 47A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 93A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 360nC @ 10V
• Input Capacitance (ciss) @ Vds: -
• Power - Max: 450W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohms
• Drain-source Breakdown Voltage: 710 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 96 A
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 350 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11236-5

STY112N65M5
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Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Doc ID 15321 Rev 2
Package mechanical data
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