SI4133W-BM Silicon Laboratories Inc, SI4133W-BM Datasheet - Page 9

• Manufacturer Part Number: SI4133W-BM
• Description: IC SYNTHESIZER RF DUALBAND 28MLP
• Manufacturer: Silicon Laboratories Inc
• Type: Frequency Synthesizerr

Specifications of SI4133W-BM

• Pll: Yes
• Input: Clock
• Output: Clock
• Number Of Circuits: 1
• Ratio - Input:output: 1:2
• Differential - Input:output: No/No
• Frequency - Max: 2.6GHz
• Divider/multiplier: Yes/No
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -20°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
• Frequency-max: 2.6GHz
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 336-1115

Table 5. Si4133W RF and IF Synthesizer Characteristics (Continued)
(V
Parameter
IF Phase Noise
IF Integrated Phase Error
RF1 Harmonic Suppression
RF2 Harmonic Suppression
IF Harmonic Suppression
RFOUT Output Power Level
IFOUT Output Power Level
IF Output Voltage Level
RF1 Output Reference Spurs
RF2 Output Reference Spurs
Power Up Request to Synthesizer Ready
Time, RF1/RF2/IF
Power Down Request to Synthesizer Off
Time, RF1/RF2/IF
Notes:
DD
1. f
2. Low update frequencies have a maximum value of N for stable operation. See Table 8 on page 18.
3. RF1 tuning range is fixed by inductance of internally bonded wires.
4. RF2 VCO center frequency is fixed by inductance of printed circuit board trace or external inductor. To properly design
5. Tuning range of externally tuned VCO assumes tolerance of L
6. From power up request (PWDNB↑ or SENB↑ during a write of 1 to bits PDIB and PDRB in Register 2) to synthesizer
7. From power down request (PWDNB↓, or SENB↑ during a write of 0 to bits PDIB and PDRB in Register 2) to supply
= 2.7 to 3.6 V, T
and layout the external inductor, see “AN31: Inductor Design for the Si41xx Synthesizer Family”.
on page 16.
ready (settled to within 0.1 ppm frequency error).
current equal to I
φ
= 200 kHz, RF1 = 2.4 GHz, RF2 = 1.5 GHz, IFOUT = 800 MHz, LPWR = 0, for all parameters unless otherwise noted.
1
6
7
A
= –25 to 85 °C)
PWDN
.
Symbol
t
t
pup
pdn
Rev. 1.1
Z
Z
L
L
Second Harmonic
Figure 4, Figure 5
Figure 4, Figure 5
100 Hz to 1 MHz
Offset = 200 kHz
Offset = 400 kHz
Offset = 600 kHz
Offset = 200 kHz
Offset = 400 kHz
Offset = 600 kHz
Test Condition
= 50 Ω, RF1 active
= 50 Ω, RF2 active
100 kHz offset
Z
Z
L
L
= 200 Ω
= 50 Ω
EXT
to ±10%. See “Setting the VCO Center Frequencies”
–7.5
Min
–8
–5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–115
0.30
Typ
–28
–23
–26
–65
–70
–75
–65
–70
–75
200
0.7
–3
–1
–4
—
Si4133W
Max
–20
–20
–20
100
0.5
–1
—
—
—
—
—
—
—
—
—
—
1
degrees
dBc/Hz
V
dBm
dBm
dBm
Unit
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
rms
RMS
µs
ns
9