MT47H64M16HR-3:H TR Micron Technology Inc, MT47H64M16HR-3:H TR Datasheet - Page 95
MT47H64M16HR-3:H TR
Manufacturer Part Number
MT47H64M16HR-3:H TR
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H64M16HR-3H_TR.pdf
(134 pages)
Specifications of MT47H64M16HR-3:H TR
Lead Free Status / Rohs Status
Compliant
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Figure 46: Consecutive READ Bursts
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
Notes:
DQS, DQS#
DQS, DQS#
Command
Command
Address
Address
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4.
3. Three subsequent elements of data-out appear in the programmed order following
4. Three subsequent elements of data-out appear in the programmed order following
5. Shown with nominal
6. Example applies only when READ commands are issued to same device.
CK#
CK#
DQ
DQ
CK
CK
DO n.
DO b.
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
t CCD
RL = 3
t CCD
NOP
NOP
T1
T1
RL = 4
t
AC,
95
t
DQSCK, and
READ
READ
Bank,
Bank,
Col b
Col b
T2
T2
T2n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
NOP
t
T3
T3
DQSQ.
DO
n
1Gb: x4, x8, x16 DDR2 SDRAM
T3n
T3n
NOP
NOP
T4
T4
DO
n
Transitioning Data
T4n
T4n
NOP
NOP
© 2004 Micron Technology, Inc. All rights reserved.
T5
T5
DO
b
T5n
T5n
T6
NOP
T6
NOP
Don’t Care
DO
b
T6n
T6n
READ
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