MT46H16M16LFBF-6:A Micron Technology Inc, MT46H16M16LFBF-6:A Datasheet - Page 59

• Manufacturer Part Number: MT46H16M16LFBF-6:A
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M16LFBF-6:A

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 22: READ Burst
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Bank a, Col n
Bank a, Col n
READ
READ
T0
T0
Notes:
command to the same bank cannot be issued until
time is hidden during the access of the last data elements.
1. D
2. BL = 4.
3. Shown with nominal
CL = 2
NOP
NOP
T1
T1
OUT
n = data-out from column n.
CL = 3
T1n
D
OUT
NOP
NOP
T2
T2
t
AC,
D
59
t
T2n
T2n
DQSCK, and
OUT
256Mb: x16, x32 Mobile LPDDR SDRAM
D
OUT
NOP
NOP
D
T3
T3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
OUT
t
DQSQ.
D
T3n
T3n
OUT
D
OUT
t
RP is met. Part of the row precharge
NOP
NOP
D
Don’t Care
T4
T4
OUT
©2008 Micron Technology, Inc. All rights reserved.
D
OUT
READ Operation
Transitioning Data
NOP
NOP
T5
T5