MT16JTF25664AZ-1G4F1 Micron Technology Inc, MT16JTF25664AZ-1G4F1 Datasheet - Page 9

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MT16JTF25664AZ-1G4F1

Manufacturer Part Number
MT16JTF25664AZ-1G4F1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT16JTF25664AZ-1G4F1

Main Category
DRAM Module
Module Type
240UDIMM
Device Core Size
64b
Organization
256Mx64
Total Density
17179869184
Number Of Elements
8
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / Rohs Status
Compliant
Electrical Specifications
Table 8:
Table 9:
PDF: 09005aef837cdd2d/Source: 09005aef837cdc74
JTF16C_256_512x64AZ.fm - Rev. A 2/09 EN
Vin, Vout
Symbol
Symbol
T
Vdd
T
Ivref
Vdd
Vtt
C
Ivtt
Ioz
A
2,3,4
Ii
2,4
1
1
Parameter
Vdd supply voltage relative to Vss
Voltage on any pin relative to Vss
Parameter
Vdd supply voltage
Termination reference current from Vtt
Termination reference voltage – command address
bus
Input leakage current; Any input
0V ≤ Vin ≤ Vdd; Vref input 0V ≤ Vin
≤ 0.95V (All other pins not under
test = 0V)
Output leakage current; 0V ≤ Vout
≤ Vddq; DQs and ODT are disabled
Vref leakage current; Vref = valid Vref level
Module ambient operating
temperature
DDR3 SDRAM component case
operating temperature
Absolute Maximum Ratings
Operating Conditions
Notes:
Notes:
Stresses greater than those listed in Table 8, may cause permanent damage to the DRAM
devices on the module. This is a stress rating only, and functional operation of the
module at these or any other conditions outside those indicated in each device’s data
sheet is not implied. Exposure to absolute maximum rating conditions for extended
periods may adversely affect reliability.
1. Vref must not be greater than 0.6 x Vdd. When Vdd is less than 500mV, Vref may be equal
1. Vtt termination voltage in excess of stated limit will adversely affect the command and
2. T
3. Refresh rate is required to double when 85°C < T
4. For further information, refer to technical note
to or less than 300mV.
address signals' voltage margin and will reduce timing margins.
on Micron’s Web site.
A
and T
C
are simultaneous requirements.
Address
inputs, RAS#,
CAS#, WE#,
BA
S#, CKE, ODT,
CK, CK#
DM
DQ, DQS,
DQS#
Commercial
Industrial
Commercial
Industrial
2GB, 4GB (x64, DR): 240-Pin DDR3 SDRAM UDIMM
9
+0.483 × Vdd
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.425
–600
Min
–32
–16
–10
–16
–40
–40
–4
0
0
Min
–0.4
–0.4
TN-00-08: Thermal
C
≤ 95°C.
0.5 × Vdd
Nom
1.5
0
0
0
0
0
Electrical Specifications
©2008 Micron Technology, Inc. All rights reserved.
Applications, available
+1.975
+1.975
+0.517 × Vdd
Max
1.575
Max
+600
+32
+16
+10
+16
+70
+85
+85
+95
+4
Units
Units
mA
µA
µA
µA
°C
°C
°C
°C
V
V
V
V

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