TIM4450-16SL Toshiba, TIM4450-16SL Datasheet - Page 5
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TIM4450-16SL
Manufacturer Part Number
TIM4450-16SL
Description
Manufacturer
Toshiba
Datasheet
1.TIM4450-16SL.pdf
(8 pages)
Specifications of TIM4450-16SL
Configuration
Single
Gate-source Voltage (max)
5V
Drain-source Volt (max)
15V
Operating Temperature Classification
Military
Pin Count
3
Lead Free Status / Rohs Status
Supplier Unconfirmed
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TIM4450-16SL
Manufacturer:
Toshiba
Quantity:
1 400
Part Number:
TIM4450-16SL
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
H IGH POWER
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
P1dB=42.5dBm at 4.4GHz to 5.0GHz
G1dB=10.0dB at 4.4GHz to 5.0GHz
Recommended gate resistance(Rg) : Rg= 100 Ω ( MAX.)
HIGH GAIN
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
I
I
η
I
th(c-c)
GSoff
IM
DSS
DS1
DS2
gm
ΔG
GSO
1dB
1dB
add
3
V
I
V
I
V
V
I
Channel to Case
DS
DS
GS
DS
DS
DS
GS
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
f
= 6.0A
= 60mA
= -200 μ A
Two-Tone Test
= 4.4 to 5.0GHz
CONDITIONS
= 3V
=
=
CONDITIONS
= 0V
Po= 31.5dBm
V
3V
3V
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
DS
X Rth(c-c)
MICROWAVE POWER GaAs FET
= 10
TIM4450-16UL
V
UNIT
UNIT
° C/W
dBm
dBc
mS
dB
dB
° C
%
A
A
V
A
V
MIN.
MIN.
41.5
-1.0
-44
9.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-5
Rev. Jun. 2006
TYP. MAX.
TYP. MAX.
3600
42.5
10.0
10.5
-2.5
-47
4.4
4.4
1.5
36
⎯
⎯
⎯
±0.6
-4.0
5.0
5.0
1.8
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯