BSP50 NXP Semiconductors, BSP50 Datasheet - Page 4

• Manufacturer Part Number: BSP50
• Manufacturer: NXP Semiconductors

Specifications of BSP50

• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage(max): 60V
• Emitter-base Voltage (max): 5V
• Base-emitter Saturation Voltage (max): 1.9@0.5mA@500mAV
• Collector-emitter Saturation Voltage: 1.3@0.5mA@500mAV
• Collector Current (dc) (max): 1A
• Dc Current Gain: 1000@150mA@10V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
1999 Apr 23
handbook, full pagewidth
handbook, full pagewidth
NPN Darlington transistors
V
V
R1 = 56 Ω; R2 = 10 kΩ; R
V
Oscilloscope: input impedance Z
CE
i
BB
= 10 V; T = 200 μs; t
h FE
5000
4000
3000
2000
1000
= −1.8 V; V
= 10 V.
10
0
−1
CC
= 10.7 V.
p
= 6 μs; t
B
= 10 kΩ; R
i
r
= 50 Ω.
= t
f
≤ 3 ns.
C
oscilloscope
= 18 Ω.
1
V i
Fig.2 DC current gain; typical values.
Fig.3 Test circuit for switching times.
(probe)
450 Ω
R1
R2
R B
V BB
4
10
R C
V CC
DUT
V o
MLB826
(probe)
450 Ω
BSP50; BSP51; BSP52
oscilloscope
10
2
I C (mA)
Product data sheet
MGD838
10
3