MPSA14 NXP Semiconductors, MPSA14 Datasheet - Page 3

• Manufacturer Part Number: MPSA14
• Manufacturer: NXP Semiconductors

Specifications of MPSA14

• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage(max): 30V
• Emitter-base Voltage (max): 10V
• Base-emitter Saturation Voltage (max): 1.5@0.1mA@100mAV
• Collector-emitter Saturation Voltage: 1.5@0.1mA@100mAV
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2005 May 04
handbook, full pagewidth
R
I
I
h
V
V
V
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
BEon
th(j-a)
NPN Darlington transistor
V
80000
60000
40000
20000
CE
h FE
= 25 C unless otherwise specified.
= 5 V.
0
10
1
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
PARAMETER
PARAMETER
1
Fig.2 DC current gain; typical values.
V
V
V
V
I
V
I
C
C
C
CB
EB
CE
CE
CE
= 100 mA; I
= 100 mA; I
= 10 mA; V
= 30 V; I
= 10 V; I
= 5 V; I
= 5 V; I
= 5 V; I
3
10
note 1
C
C
C
CONDITIONS
E
C
= 10 mA; see Fig.2
= 100 mA; see Fig.2
= 100 mA
CE
B
B
CONDITIONS
= 0 A
= 0 A
= 0.1 mA
= 0.1 mA
= 5 V; f = 100 MHz
10
2
10000
20000
125
VALUE
MIN.
250
I C (mA)
Product specification
100
100
1.5
1.5
2
MAX.
MPSA14
MGD837
UNIT
10
K/W
nA
nA
V
V
V
MHz
3
UNIT