MT36HTS1G72PY-667A1 Micron Technology Inc, MT36HTS1G72PY-667A1 Datasheet - Page 14

• Manufacturer Part Number: MT36HTS1G72PY-667A1
• Manufacturer: Micron Technology Inc

Specifications of MT36HTS1G72PY-667A1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 1Gx72
• Total Density: 8GByte
• Access Time (max): 45ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 3.294A
• Number Of Elements: 36
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / Rohs Status: Compliant

Table 18:
PDF: 09005aef822553c2/Source: 09005aef822553af
HTJ_S36C512_1Gx72.fm - Rev. F 5/07 EN
Byte
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
0
1
2
3
4
5
6
7
8
9
Number of SPD bytes used by Micron
Total number of bytes in SPD device
Fundamental memory type
Number of row addresses on SDRAM
Number of column addresses on SDRAM
DIMM height and module ranks
Module data width
Reserved
Module voltage interface levels
SDRAM cycle time,
(CL = MAX value, see byte 18)
SDRAM access from clock,
(CL = MAX value, see byte 18)
Module configuration type
Refresh rate/type
SDRAM device width (primary SDRAM)
Error-checking SDRAM data width
Reserved
Burst lengths supported
Number of banks on SDRAM device
CAS latencies supported
Module thickness
DDR2 DIMM type
SDRAM module attributes
SDRAM device attributes: weak driver (01) or weak driver and
50Ω ODT (03)
SDRAM cycle time,
SDRAM access from CK,
SDRAM cycle time,
SDRAM access from CK,
MIN row precharge time,
MIN row active-to-row active,
MIN RAS#-to-CAS# delay,
MIN active-to-precharge time,
Serial Presence-Detect Matrix – 4GB
t
t
t
CK
CK, MAX CL - 1
CK, MAX CL - 2
t
t
Description
AC, MAX CL - 1
AC, MAX CL - 2
t
t
t
RCD
AC
RP
t
t
RRD
RAS
4GB, 8GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
14
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb stacked or 2Gb
TwinDie™ devices
Registered DIMM
Entry (Version)
30mm, stacked,
ECC and parity
-53E/-40E (4, 3)
DDR2 SDRAM
-667 (5, 4, 3)
1 PLL, 2 Reg
7.81µs/SELF
dual rank
SSTL 1.8V
-53E/-40E
-53E/-40E
-53E/-40E
-53E/-40E
-53E/-40E
-53E/-40E
-667/-53E
-667
-53E
-40E
-667
-53E
-40E
-667
-667
-667
-53E
-40E
-667
-667
-667
-667
-40E
ECC
128
256
4, 8
14
11
72
0
4
4
0
8
Serial Presence-Detect
©2003 Micron Technology, Inc. All rights reserved.
4GB
–/2D
HTJ
3D
80
08
08
0E
0B
71
48
00
05
50
50
60
02
06
82
04
04
00
0C
08
18
03
01
05
01
50
50
60
00
00
3C
1E
3C
28
–
–
–
–
–
–
–
–
–
–
4GB
HTS
0B
3D
0C
3D
3C
3C
3C
3C
2D
80
08
08
0E
71
48
00
05
30
50
45
50
60
02
06
82
04
04
00
08
38
18
01
01
05
03
01
50
45
50
60
50
00
45
00
1E
28