EP2SGX60EF1152I4 Altera, EP2SGX60EF1152I4 Datasheet - Page 143

• Manufacturer Part Number: EP2SGX60EF1152I4
• Description: IC STRATIX II GX 60K 1152-FBGA
• Manufacturer: Altera
• Series: Stratix® II GXr

Specifications of EP2SGX60EF1152I4

• Number Of Logic Elements/cells: 60440
• Number Of Labs/clbs: 3022
• Total Ram Bits: 2544192
• Number Of I /o: 534
• Voltage - Supply: 1.15 V ~ 1.25 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C
• Package / Case: 1152-FBGA
• Family Name: Stratix II GX
• Number Of Logic Blocks/elements: 60440
• # I/os (max): 534
• Frequency (max): 732.1MHz
• Process Technology: SRAM
• Operating Supply Voltage (typ): 1.2V
• Logic Cells: 60440
• Ram Bits: 2544192
• Operating Supply Voltage (min): 1.15V
• Operating Supply Voltage (max): 1.25V
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 1152
• Package Type: FC-FBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Number Of Gates: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: 544-2186

Altera Corporation
October 2007
Notes to
(1)
(2)
(3)
(4)
(5)
(6)
VCCSEL
(V
VCCSEL
(V
VCCSEL
by V
Stratix II GX Always
Table 2–36. Board Design Recommendations for nCEO and nCE Input Buffer Power
Table 2–37. Supported TDO/TDI Voltage Combinations (Part 1 of 2)
nCE Input Buffer Power in
C C I O
C C I O
Device
C C P D
Input buffer is 3.3-V tolerant.
The nCEO output buffer meets V
Input buffer is 2.5-V tolerant.
The nCEO output buffer meets V
Input buffer is 1.8-V tolerant.
An external 250-Ω pull-up resistor is not required, but recommended if signal levels on the board are not optimal.
Bank 3 = 1.5 V)
Bank 3 = 1.8 V)
I/O Bank 3
Table
low (nCE powered
high
high
= 3.3 V)
V
Buffer Power
2–36:
C C P D
TDI Input
(3.3 V)
Table 2–36
can successfully drive nCE for all power supply combinations.
For JTAG chains, the TDO pin of the first device drives the TDI pin of the
second device in the chain. The V
(TCK, TMS, TDI, and TRST) is internally hardwired to GND selecting the
3.3-V/2.5-V input buffer powered by V
V
TDI on the second device, but that may not be possible depending on the
application.
ensure proper JTAG chain operation.
V
V
C C I O
CCIO
v
C C I O
v
v
(1),
O H
OH
(1),
v
= 3.3 V V
of the TDO bank from the first device match the V
= 3.3 V
(MIN) = 2.0 V.
(1)
(MIN) = 2.4 V.
(2)
(2)
contains board design recommendations to ensure that nCEO
Table 2–37
Stratix II GX nCEO V
Stratix II GX TDO V
C C I O
V
v
v
C C I O
v
(3),
(3),
v
= 2.5 V
(4)
= 2.5 V
(2)
(4)
(4)
contains board design recommendations to
V
C C I O
CCIO
C C I O
V
C C I O
CCSEL
v
v
Stratix II GX Device Handbook, Volume 1
Voltage Level in I/O Bank 4
Voltage Level in I/O Bank 7
v
v
= 1.8 V V
(5)
(6)
= 1.8 V V
(3)
input on the JTAG input I/O cells
CCPD
. The ideal case is to have the
Level shifter
C C I O
Level shifter
required
C C I O
required
Stratix II GX Architecture
v
v
= 1.5 V V
= 1.5 V V
CCSEL
Level shifter
Level shifter
C C I O
Level shifter
C C I O
settings for
required
required
required
v
= 1.2 V
= 1.2 V
2–135