EP4SGX530HH35C2N Altera, EP4SGX530HH35C2N Datasheet - Page 58
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EP4SGX530HH35C2N
Manufacturer Part Number
EP4SGX530HH35C2N
Description
IC STRATIX IV FPGA 530K 1152HBGA
Manufacturer
Altera
Series
Stratix® IV GXr
Datasheets
1.EP4SGX110DF29C3N.pdf
(80 pages)
2.EP4SGX110DF29C3N.pdf
(1154 pages)
3.EP4SGX110DF29C3N.pdf
(432 pages)
4.EP4SGX110DF29C3N.pdf
(22 pages)
5.EP4SGX110DF29C3N.pdf
(30 pages)
6.EP4SGX110DF29C3N.pdf
(72 pages)
7.EP4SGX530HH35C2N.pdf
(1145 pages)
Specifications of EP4SGX530HH35C2N
Number Of Logic Elements/cells
531200
Number Of Labs/clbs
21248
Total Ram Bits
27376
Number Of I /o
564
Voltage - Supply
0.87 V ~ 0.93 V
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 85°C
Package / Case
1152-HBGA
Family Name
Stratix® IV
Number Of Logic Blocks/elements
531200
# Registers
424960
# I/os (max)
560
Process Technology
40nm
Operating Supply Voltage (typ)
900mV
Logic Cells
531200
Ram Bits
28033024
Operating Supply Voltage (min)
0.87V
Operating Supply Voltage (max)
0.93V
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
1152
Package Type
FCHBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Number Of Gates
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
1–50
Stratix IV Device Handbook Volume 4: Device Datasheet and Addendum
Configuration and JTAG Specifications
Table 1–37
Table 1–37. Configuration Mode Specifications for Stratix IV Devices—Preliminary
Table 1–38
Table 1–38. JTAG Timing Parameters and Values for Stratix IV Devices—Preliminary
Temperature Sensing Diode Specifications
Table 1–39
Table 1–39. External Temperature Sensing Diode Specifications—Preliminary
Passive serial
Fast passive parallel
Fast active serial
Remote update only in fast AS mode
Note to
(1) This denotes the maximum frequency supported in the FPP configuration scheme. The frequency supported for
t
t
t
t
t
t
t
t
t
Note to
(1) A 1 ns adder is required for each V
I
V
Series resistance
Diode ideality factor
JCP
JCH
JCL
JPSU (TDI)
JPSU (TMS)
JPH
JPCO
JPZX
JPXZ
bias
bias,
Symbol
, diode source current
each device may vary depending on device density. For more information, refer to the
Security, and Remote System Upgrades in Stratix IV Devices
I/O bank = 2.5 V, or 13 ns if it equals 1.8 V.
voltage across diode
Table
Table
lists the Stratix IV configuration mode specifications.
lists the JTAG timing parameters and values for Stratix IV devices.
lists the specifications for the Stratix IV temperature sensing diode.
1–37:
1–38:
Programming Mode
Description
TCK clock period
TCK clock high time
TCK clock low time
TDI JTAG port setup time
TMS JTAG port setup time
JTAG port hold time
JTAG port clock to output
JTAG port high impedance to valid output
JTAG port valid output to high impedance
(1)
CCIO
Description
voltage step down from 3.0 V. For example, t
Chapter 1: DC and Switching Characteristics for Stratix IV Devices
Min
0.3
—
—
8
Min
4.3
—
—
17
chapter.
DCLK F
Typ
—
—
—
—
Typ
5.3
—
—
26
Min
30
14
14
—
—
—
1
3
5
MAX
JPCO
April 2011 Altera Corporation
Configuration, Design
= 12 ns if V
11
14
14
1.030
Switching Characteristics
Max
Max
500
125
125
Max
0.9
< 5
40
10
—
—
—
—
—
—
(1)
(1)
(1)
CCIO
of the TDO
MHz
MHz
MHz
MHz
Unit
Unit
Unit
μA
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
Ω
V