PIC10F200-I/P Microchip Technology, PIC10F200-I/P Datasheet - Page 68

• Manufacturer Part Number: PIC10F200-I/P
• Description: IC PIC MCU FLASH 256X12 8DIP
• Manufacturer: Microchip Technology
• Series: PIC® 10Fr

Specifications of PIC10F200-I/P

• Program Memory Type: FLASH
• Program Memory Size: 384B (256 x 12)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 4MHz
• Peripherals: POR, WDT
• Number Of I /o: 3
• Ram Size: 16 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: PIC10F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 16 B
• Interface Type: USB
• Maximum Clock Frequency: 4 MHz
• Number Of Programmable I/os: 4
• Number Of Timers: 1
• Operating Supply Voltage: 2 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: AC162059 - HEADER INTRFC MPLAB ICD2 8/14PINAC164037 - MODULE SKT 6L PROMATE II SOT23
• Eeprom Size: -
• Data Converters: -
• Connectivity: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PIC10F200/202/204/206
12.2
DS41239D-page 66
DC CHARACTERISTICS
D001
D002
D003
D004
D010
D020
D022
D023
D024
Note 1:
Param
No.
2:
3:
4:
5:
6:
*
DC Characteristics: PIC10F200/202/204/206 (Extended)
V
S
VREF
Sym
I
I
V
V
WDT
a) The test conditions for all I
b) For standby current measurements, the conditions are the same, except that the device is in Sleep mode.
I
I
CMP
These parameters are characterized but not tested.
Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design guidance only
and is not tested.
This is the limit to which V
The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus loading, bus
rate, internal code execution pattern and temperature also have an impact on the current consumption.
Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
or V
The peripheral current is the sum of the base I
enabled.
Measured with the Comparator enabled.
POR
VDD
DD
PD
DD
DR
All I/O pins tri-stated, pulled to V
SS
.
Supply Voltage
RAM Data Retention Voltage
V
to ensure Power-on Reset
V
to ensure Power-on Reset
Supply Current
Power-down Current
WDT Current
Comparator Current
Internal Reference Current
DD
DD
Start Voltage
Rise Rate
Characteristic
(5)
(3)
DD
(5)
can be lowered in Sleep mode without losing RAM data.
(4)
DD
measurements in active operation mode are:
SS
(5), (6)
(2)
, T0CKI = V
Standard Operating Conditions (unless otherwise specified)
Operating Temperature -40×C £ T
0.05*
Min
1.5*
2.0
—
—
—
—
—
—
—
—
—
—
DD
or I
DD
, MCLR = V
Typ
PD
0.63
0.35
Vss
175
175
0.1
1.0
12
42
85
—
7
and the additional current consumed when this peripheral is
(1)
Max
275
120
200
5.5
1.1
—
—
—
15
18
22
27
85
9
DD
; WDT enabled/disabled as specified.
Units
V/ms
mA
μA
μA
μA
μA
μA
μA
μA
μA
μA
V
V
V
A
See Figure 12-1
Device in Sleep mode
V
V
V
V
V
V
V
V
V
V
£ +125×C (extended)
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
= 2.0V
= 5.0V
= 2.0V
= 5.0V
= 2.0V
= 5.0V
= 2.0V
= 5.0
= 2.0V
= 5.0V
© 2007 Microchip Technology Inc.
Conditions
DD