ISP1760BEGA ST-Ericsson Inc, ISP1760BEGA Datasheet - Page 5
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ISP1760BEGA
Manufacturer Part Number
ISP1760BEGA
Description
IC USB CTRL HI-SPEED 128LQFP
Manufacturer
ST-Ericsson Inc
Datasheet
1.ISP1760BEUM.pdf
(12 pages)
Specifications of ISP1760BEGA
Controller Type
USB Peripheral Controller
Interface
EHCI Interface
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
128-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Supply
-
Other names
ISP1760BE-S
ISP1760BE-S
ISP1760BE-S
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ISP1760BEGA
Manufacturer:
LEVELONE
Quantity:
450
Part Number:
ISP1760BEGA
Manufacturer:
ST
Quantity:
20 000
Pushing on-state resistance
below the milliohm
Increased integration, smaller devices and higher frequencies are major trends in RF design.
Philips helps designers respond to these challenges while improving overall RF performance with
RF System-in-a-Package (RF SiP) and passive integration technologies.The benefits of these technologies
can be clearly seen in the new UAA3587 RF transceiver for GPRS and EDGE mobile phones, enabling
the rapid development of highly featured next-generation handsets.
In today’s markets, manufacturers are increasingly looking for
more-integrated RF solutions to cut size, cost and time-to-market.
However, no single silicon manufacturing process is capable of
providing maximum performance in all areas of an RF system.
Philips’ RF SiP technology provides an answer to this apparent
paradox. Combining multiple dies into a single package, RF SiPs
are ‘one-chip’ solutions that allow each sub-system to be
manufactured in its optimal process – such as Philips BiCMOS
QUBiC for RF components and 0.12 µm CMOS for digital logic.
The RF SiP approach is perfectly complemented by Philips’
silicon integrated passive technology. In this technology, high-
quality passive components such as accurate resistors, high-Q
inductors and high-density MIM capacitors are integrated into a
low-cost silicon substrate. As well as reducing parasitic losses
and improving RF performance, this helps cut assembly costs
and time-to-market. Within the silicon-based RF SiP, the low-
cost passive die acts as a carrier for the active components.
The active dies are flip-chip bonded to the passive silicon, and
the whole assembly is housed in a standard plastic package.
Combining its excellence in silicon and packaging technologies, Philips has demonstrated the world’s
first sub-milliohm MOSFET.The device displays a number of technology developments that will increase
efficiency, reduce device footprints and improve performance in power management applications across
all markets.
Energy efficiency and device size are key considerations in many
market segments, particularly for battery-powered and handheld
equipment. Philips Semiconductors is leading the way in improving
these properties with the demonstration of the world’s first
MOSFET to exhibit an on-state resistance (R
1 m
This important step in MOSFET development was achieved
primarily through copper clip technology; an area where Philips
leads the industry. Typically MOSFETs are connected to the top
of the package using a weld and wire bond. However, copper clips
allow the entire surface of the chip to be connected – rather
than just a single point. This improves current distribution and
thermal performance, significantly lowering on-state resistance.
Careful design of the copper clip and package leadframe was
needed to ensure accurate control of the clip position and a
workable assembly process.
– a reduction of around 40%.
Maximize RF performance,
minimize system size
DS(on)
) of less than
“In a fiercely competitive market, RF SiP solutions and passive
integration technology on the RF front-end provide a critical
advantage,” said Gert-Jan Kaat, Senior Vice-President for mobile
communications in Philips Semiconductors. “Handset manufacturers
can save board space, maximize performance, drastically reduce
engineering hours and get their products to market quickly.”
The first cellular IC to make use of these technologies is the
UAA3587 RF transceiver, which will become the heart of the
RF front-end for Nexperia Cellular System Solutions. It uses
35 fewer RF components than the previous generation and
enables a design area of less than 2.5 cm
radio sub-system. Combined with the miniaturization of other
components, this gives a space saving of 30% over the previous
‘best in class’ – and 50% over the industry average while offering
increased RF functionality.
The device uses many other technology breakthroughs – such
as Philips’ patented self-aligned process, which enables the
manufacture of silicon with low enough resistance. In addition,
accommodating the copper clip arrangement required solderable
top metallization. In this way, Philips took the best available
silicon technology and packaging technology, then combined and
optimized them to reach the required sub-milliohm target.
“As the number of portable electronics products continues to
grow, power management devices with greater functionality,
performance and reliability are required,” said Manuel Frade,
Vice President and General Manager of Philips Semiconductors’
Power Management Business Line. “Philips continues to find new
methods to improve chips and ensure the industry can meet
customer requirements.”
MOSFETs with such low R
in applications where power loss and heat dissipation are critical,
such as computer motherboards.They will also be important in
automotive applications where ever-higher currents need to be
switched with minimum power loss. Many of the technology
developments made during the sub-milliohm MOSFET program
have already been implemented in Philips’ recently announced
LFPAK MOSFETs and P-channel µTrenchMOS devices.
The world’s first MOSFET with an on-state resistance below 1 m
www.semiconductors.philips.com
/news/backgrounders/bg0034
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Insight
When you hear about major developments
in the semiconductor industry, it’s usually
about leading-edge semiconductor process
technologies. After all, breaking the
so-called 1 micron and 0.1 micron barriers
is what made headline news. It is true that
achieving progressively smaller geometries
is important, for without them the
consumer electronics industry won’t have
the chips it will need in three years time
to meet the exponential performance
demands of the information society. In
practical terms though, these announce-
ments are not about the here and now,
they are more about the yet to come.
What is practical in terms of today’s applications is
how current technologies are being brought together
to solve here and now problems. Real applications,
especially those in consumer electronics, typically
require the use of several different process technologies
to achieve the required price/performance points.
Mobile phones, for example, rely on the latest high-
volume CMOS process technologies to implement their
digital baseband functionality.Yet when it comes to
their RF functions, process technologies such as silicon
or silicon germanium BiCMOS are required to achieve
the necessary high-frequency performance and dynamic
range; III-V technologies such as GaAs are required to
up the efficiency and linearity of RF power amplifiers;
and a whole range of passive components such as
inductors and capacitors are needed for resonant
circuits, filters and impedance matching networks.
Up until a few years ago it would have been the
responsibility of the handset manufacturer to integrate
all these technologies into a phone, using a mixture
of ICs and discrete components. Today that has all
changed. Now it is semiconductor companies that
integrate all these technologies into IC-sized packages
so that handset manufacturers can enjoy the luxury of
ultra-miniature, fully tested, plug-and-play solutions.
This new breed of System-in-a-Package (SiP) solutions
is not just appearing in the mobile communications
industry. It is appearing in a whole range of consumer
electronics products.
The hybrid-circuit industry would argue that they have
been doing this for years, and in a sense they have. But
there are important differences between conventional
hybrid circuits and SiPs. The latest SiP technologies,
such as those being used in Philips RF SiPs, move as
many components as possible onto silicon, thereby
leveraging the miniaturization, precision and volume
manufacturing advantages of wafer-scale processing.
Inductors, capacitors and resistors, once the realm of
conventional discrete component manufacturers, are
now manufactured on silicon using low-cost ‘back-end’
wafer processes.
There is another important difference. Hybrid circuit
manufacturers tend to outsource their components.
Philips, on the other hand, with its comprehensive
range of semiconductor processes and passive
component integration technologies can produce
entire SiP solutions in-house, giving it complete control
over system partitioning. As a result, components can
be shifted to whatever type of silicon produces the
best price/performance ratio.
Assembly and test may not have been the most
glamorous end of the semiconductor business, but
when it comes to stacking chips on chips, placing them
to micron accuracies, bonding them electrically and
mechanically together, and testing them as a complete
system solution, SiP technology is one of the most
exciting new developments in the industry.
Peter Harold
former European Editor, EDN Magazine
World News | May - June 2004 | MultiMarket Semiconductors
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