VMM1500-075X2 IXYS, VMM1500-075X2 Datasheet

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VMM1500-075X2

Manufacturer Part Number
VMM1500-075X2
Description
MOSFET & Power Driver ICs Dual Pwr Mosfet Module 75V 1450A
Manufacturer
IXYS
Datasheet

Specifications of VMM1500-075X2

Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Dual Power
MOSFET Module
Phaseleg Configuration
© 2010 IXYS All rights reserved
MOSFET T1 + T2
Symbol
V
V
I
I
I
I
Symbol
R
V
I
I
C
C
C
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
E
E
R
R
j additional current limitation by external leads
DSS
GSS
D25
D80
F25
F80
d(on)
r
d(off)
f
d(on)
r
d(off)
f
GS(th)
GS
on
off
rec
on
off
rec
DSS
DSon
iss
oss
rss
thJC
thJH
g
gs
gd
Conditions
T
T
T
T
T
Conditions
V
V
V
V
V
V
inductive load
V
I
R
inductive load
V
I
R
with heat transfer paste (IXYS test setup)
D
D
VJ
C
C
C
C
GS
DS
DS
GS
GS
GS
GS
GS
G
G
= 1200 A; R
= 1200 A; R
= 25°C
= 80°C
= 25°C (diode) j
= 80°C (diode) j
= R
= R
= 25°C to 150°C
= V
= 10 V; I
= 20 V; I
= ± 20 V; V
= 0 V; V
= 10 V; V
= 10 V; V
= 10 V; V
(T
G ext
G ext
DSS
VJ
; V
= 25°C, unless otherwise specified)
+ R
+ R
DS
D
D
GS
DS
DS
DS
= I
= 2.5 mA
= 25 V; f = 1 MHz
G
G
out driver
out driver
DS
= 0 V
= 37 V; I
= 37 V
= 37 V
= 1.8 Ω
= 1.8 Ω
D80
= 0 V
; on chip level
j
j
D
= 1200 A
T
T
T
T
VJ
VJ
VJ
VJ
= 25°C
= 125°C
= 25°C
= 125°C
min.
2
Characteristic Values
1950
1680
1680
Maximum Ratings
0.094
12.8
1.38
0.06
0.08
typ.
115
580
450
260
500
880
260
520
720
1.5
3.5
11
10
54
49
8
9
3
1560
1240
1560
1240
max.
0.38
0.15
0.08
0.13
± 20
3.0
75
4
K/W
K/W
mW
mA
mA
mJ
mJ
mJ
mJ
mJ
mJ
nC
nC
nC
µA
nF
nF
nF
3
1
2
ns
ns
ns
ns
ns
ns
ns
ns
V
V
A
A
A
A
V
V
I
R
Features
• Trench MOSFETs
• package
Applications
• converters with high power density for
D25
- low R
- optimized intrinsic reverse diode
- low inductive current path
- screw connection to high current
- use of non interchangeable
- Kelvin source terminals for easy drive
- isolated DCB ceramic base plate
- main and auxiliary AC drives of
- 4 quadrant DC drives
- power supplies with low input voltage,
DSS
DS(on)
main terminals
connectors for auxiliary terminals
possible
electric vehicles
e.g. from fuel cells or solar cells
VMM 1500-0075X2
DSon
=
= 1560 A
= 0.38 mΩ
1
75 V
2
3
11
10
20100629a
9
8
1 - 5

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VMM1500-075X2 Summary of contents

Page 1

... I = 1200 ext out driver off E rec R thJC R with heat transfer paste (IXYS test setup) thJH j additional current limitation by external leads © 2010 IXYS All rights reserved Maximum Ratings ± 20 1560 1240 1560 1240 Characteristic Values min. typ. max. 0. 25°C ...

Page 2

... M Mounting torque d Terminal connection torque (M6 pin to chip Weight * ) ·( DS(on) pin to chip M6x5 DIN970 79 74.5±0.3 93 110 © 2010 IXYS All rights reserved Characteristic Values min. typ. max 25°C 1. 125°C 0.9 VJ 120 T = 25°C VJ 2.1 30 120 T = 125°C VJ 2.8 34 Maximum Ratings 500 -40 ...

Page 3

... R R DS(on) DS(on) normalized 0.8 normal. 0.4 0.0 -50 - [°C] VJ Fig normalized to I DS(on) value vs. junction temperature © 2010 IXYS All rights reserved 80 100 120 140 2.0 2.5 3.0 = 25°C J 1.0 0.8 0.6 R DS(on) R DS(on) R incl. 0.4 DS(on) [mΩ] mounting resistance ...

Page 4

... 0/ [mJ 125° 10x rec(on [Ω] G Fig. 11 Typ. turn-on energy and switching times versus gate resistor, inductive switching © 2010 IXYS All rights reserved 2000 1600 1200 I D [A] 800 400 0 1200 1600 -40 1600 1200 off 800 40 [ns] [mJ] 400 20 t d(on) ...

Page 5

... F Fig. 15 Reverse recovery time t of the body diode vs. di d(on) r Fig. 17 Definition of switching times © 2010 IXYS All rights reserved Q rr [µC] 700 800 RM 1200 1000 I S [A] 700 800 rr 0.10 0. thJH [K/W] 0.04 ...

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